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@ARTICLE{Gnzler:904102,
      author       = {Günzler, Antonio and Bermúdez-Ureña, Esteban and
                      Muscarella, Loreta A. and Ochoa, Mario and Ochoa-Martínez,
                      Efraín and Ehrler, Bruno and Saliba, Michael and Steiner,
                      Ullrich},
      title        = {{S}haping {P}erovskites: {I}n {S}itu {C}rystallization
                      {M}echanism of {R}apid {T}hermally {A}nnealed,
                      {P}repatterned {P}erovskite {F}ilms},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {13},
      number       = {5},
      issn         = {1944-8244},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2021-05672},
      pages        = {6854 - 6863},
      year         = {2021},
      abstract     = {Understanding and controlling the crystallization of
                      organic–inorganic perovskite materials is important for
                      their function in optoelectronic applications. This control
                      is particularly delicate in scalable single-step thermal
                      annealing methods. In this work, the crystallization
                      mechanisms of flash infrared-annealed perovskite films,
                      grown on substrates with lithographically patterned Au
                      nucleation seeds, are investigated. The patterning enables
                      the in situ observation to study the crystallization
                      kinetics and the precise control of the perovskite
                      nucleation and domain growth, while retaining the
                      characteristic polycrystalline micromorphology with larger
                      crystallites at the boundaries of the crystal domains, as
                      shown by electron backscattering diffraction. Time-resolved
                      photoluminescence measurements reveal longer charge carrier
                      lifetimes in regions with large crystallites on the domain
                      boundaries, relative to the domain interior. By increasing
                      the nucleation site density, the proportion of larger
                      crystallites is increased. This study shows that the
                      combination of rapid thermal annealing with nucleation
                      control is a promising approach to improve perovskite
                      crystallinity and thereby ultimately the performance of
                      optoelectronic devices.},
      cin          = {IEK-5},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1212 - Materials and Interfaces (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1212},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:33513304},
      UT           = {WOS:000619638400095},
      doi          = {10.1021/acsami.0c20958},
      url          = {https://juser.fz-juelich.de/record/904102},
}