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@ARTICLE{Kingma:904103,
      author       = {Kingma, Aldo and Naziris, Frideriki and Bakker, Klaas and
                      Mack, Karolina and Huhn, Vito and Theelen, Mirjam},
      title        = {{S}tudy of the physical and chemical origin of features
                      observed in luminescence and thermography images of
                      {C}u({I}n,{G}a){S}e2},
      journal      = {Solar energy materials $\&$ solar cells},
      volume       = {230},
      number       = {15},
      issn         = {0927-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {NH, Elsevier},
      reportid     = {FZJ-2021-05673},
      pages        = {111145},
      year         = {2021},
      abstract     = {Luminescence and thermography have proven to be effective
                      tools for the detection of failure modes and defects in
                      Cu(In,Ga)Se2 (CIGS)-based photovoltaic (PV) devices.
                      However, the chemical and physical origin of many of the
                      features observed with these techniques are still unclear.
                      This makes it difficult to asses their impact on device
                      performance and lifetime. Here, features were identified in
                      CIGS cells using spatial photoluminescence (PL),
                      electroluminescence (EL), illuminated lock-in thermography
                      (ILIT) and dark lock-in thermography (DLIT). Localized
                      features were studied using optical microscopy, scanning
                      electron microscopy, electron dispersive X-ray spectroscopy
                      and confocal microscopy. The most commonly observed features
                      could be associated with three different origins. Firstly,
                      TCO sheet resistance resulting in a gradient in the
                      direction of current flow was visible in each sample. For
                      samples with high TCO sheet resistance this compromised
                      detection of other features in EL. Secondly, about half of
                      the detected features corresponded to areas of exposed
                      molybdenum resulting in dark spots in PL and EL. These
                      occurred in shunted and non-shunted form, with only the
                      former causing hotspots in thermography. Thirdly, ohmic
                      shunts induced by current-injection (current-induced shunts)
                      were found to form large hotspots in ILIT and DLIT and a
                      significant drop in luminescence intensity in EL and PL.
                      Localized features in luminescence were only observed for
                      the largest current-induced shunts as clear bright spots in
                      PL and clear dark spots in EL. The results from this study
                      contribute to the distinction of different defect types in
                      modules using exclusively luminescence and thermography
                      imaging techniques.},
      cin          = {IEK-5},
      ddc          = {620},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1215 - Simulations, Theory, Optics, and Analytics (STOA)
                      (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1215},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000693028900004},
      doi          = {10.1016/j.solmat.2021.111145},
      url          = {https://juser.fz-juelich.de/record/904103},
}