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@ARTICLE{Li:904104,
      author       = {Li, Feng and Duan, Weiyuan and Pomaska, Manuel and Köhler,
                      Malte and Ding, Kaining and Pu, Yong and Aeberhard, Urs and
                      Rau, Uwe},
      title        = {{Q}uantum {T}ransport across {A}morphous-{C}rystalline
                      {I}nterfaces in {T}unnel {O}xide {P}assivated {C}ontact
                      {S}olar {C}ells: {D}irect versus {D}efect-{A}ssisted
                      {T}unneling},
      journal      = {Chinese physics letters},
      volume       = {38},
      number       = {3},
      issn         = {0256-307X},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2021-05674},
      pages        = {036301 -},
      year         = {2021},
      abstract     = {Tunnel oxide passivated contact solar cells have evolved
                      into one of the most promising silicon solar cell concepts
                      of the past decade, achieving a record efficiency of $25\%.$
                      We study the transport mechanisms of realistic tunnel oxide
                      structures, as encountered in tunnel oxide passivating
                      contact (TOPCon) solar cells. Tunneling transport is
                      affected by various factors, including oxide layer
                      thickness, hydrogen passivation, and oxygen vacancies. When
                      the thickness of the tunnel oxide layer increases, a faster
                      decline of conductivity is obtained computationally than
                      that observed experimentally. Direct tunneling seems not to
                      explain the transport characteristics of tunnel oxide
                      contacts. Indeed, it can be shown that recombination of
                      multiple oxygen defects in a-SiOx can generate atomic
                      silicon nanowires in the tunnel layer. Accordingly, new and
                      energetically favorable transmission channels are generated,
                      which dramatically increase the total current, and could
                      provide an explanation for our experimental results. Our
                      work proves that hydrogenated silicon oxide (SiOx:H)
                      facilitates high-quality passivation, and features good
                      electrical conductivity, making it a promising hydrogenation
                      material for TOPCon solar cells. By carefully selecting the
                      experimental conditions for tuning the SiOx:H layer, we
                      anticipate the simultaneous achievement of high open-circuit
                      voltage and low contact resistance.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1215 - Simulations, Theory, Optics, and Analytics (STOA)
                      (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1215},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000632840900001},
      doi          = {10.1088/0256-307X/38/3/036301},
      url          = {https://juser.fz-juelich.de/record/904104},
}