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@ARTICLE{Theeuwes:904119,
      author       = {Theeuwes, Roel J. and Melskens, Jimmy and Black, Lachlan E.
                      and Beyer, Wolfhard and Koushik, Dibyashree and Berghuis,
                      Wilhelmus J. H. and Macco, Bart and Kessels, Wilhelmus M.
                      M.},
      title        = {{PO} x /{A}l 2 {O} 3 {S}tacks for c-{S}i {S}urface
                      {P}assivation: {M}aterial and {I}nterface {P}roperties},
      journal      = {ACS applied electronic materials},
      volume       = {3},
      number       = {10},
      issn         = {2637-6113},
      address      = {Washington, DC},
      publisher    = {ACS Publications},
      reportid     = {FZJ-2021-05689},
      pages        = {4337 - 4347},
      year         = {2021},
      abstract     = {Phosphorus oxide (POx) capped by aluminum oxide (Al2O3) has
                      recently been discovered to provide excellent surface
                      passivation of crystalline silicon (c-Si). In this work,
                      insights into the passivation mechanism of POx/Al2O3 stacks
                      are gained through a systematic study of the influence of
                      deposition temperature (Tdep = 100–300 °C) and annealing
                      temperature (Tann = 200–500 °C) on the material and
                      interface properties. It is found that employing lower
                      deposition temperatures enables an improved passivation
                      quality after annealing. Bulk composition, density, and
                      optical properties vary only slightly with deposition
                      temperature, but bonding configurations are found to be
                      sensitive to temperature and correlated with the interface
                      defect density (Dit), which is reduced at lower deposition
                      temperature. The fixed charge density (Qf) is in the range
                      of + (3–9) × 1012 cm–2 and is not significantly altered
                      by annealing, which indicates that the positively charged
                      entities are generated during deposition. In contrast, Dit
                      decreases by 3 orders of magnitude (∼1013 to ∼1010
                      eV–1 cm–2) upon annealing. This excellent chemical
                      passivation is found to be related to surface passivation
                      provided by hydrogen, and mixing of aluminum into the POx
                      layer, leading to the formation of AlPO4 upon annealing.},
      cin          = {IEK-5},
      ddc          = {620},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1212 - Materials and Interfaces (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1212},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {34723186},
      UT           = {WOS:000711759300008},
      doi          = {10.1021/acsaelm.1c00516},
      url          = {https://juser.fz-juelich.de/record/904119},
}