Home > Publications database > Formation of a Stable Solid-Electrolyte Interphase at Metallic Lithium Anodes Induced by LiNbO 3 Protective Layers > print

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005     20240712112826.0
024 7 _ |a 10.1021/acsaem.1c02278
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100 1 _ |a Jiang, Ming
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245 _ _ |a Formation of a Stable Solid-Electrolyte Interphase at Metallic Lithium Anodes Induced by LiNbO 3 Protective Layers
260 _ _ |a Washington, DC
|c 2021
|b ACS Publications
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520 _ _ |a The stability of solid-electrolyte interphase (SEI) surface films at Li-metal anodes is crucial for the safe and durable operation of lithium-metal batteries (LMBs). By combining Li-metal anodes with high-performance Ni-rich transition-metal oxide cathodes, LMBs can meet the goal of a high specific energy density of more than 500 Wh kg–1. However, Li-metal anodes suffer from serious problems, especially the nonuniform lithium deposition and uncontrollable SEI formation. In this work, Li-metal anodes were protected by thin-film LiNbO3 coatings. Full cells composed of protected Li-metal anodes and LiNi0.6Co0.2Mn0.2O2 cathodes were examined electrochemically and by physical characterization methods. Postmortem analyses of pristine and prolonged cycled Li-metal anodes were performed. The results revealed the formation of more stable SEI films at the protected Li-metal anodes in comparison to unprotected electrodes. Consequently, the LiNbO3 layers improved the cycle-life performance of Li-metal anodes in LMBs. Furthermore, X-ray photoelectron spectroscopy (XPS) analyses showed that the reduction of metallic ions stemming from the Ni-rich cathodes was also inhibited by the protective LiNbO3 layers, thereby further controlling the degradation of Li-metal anodes.
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700 1 _ |a Zhang, Qian
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700 1 _ |a Danilov, Dmitri
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700 1 _ |a Eichel, Rüdiger-A.
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700 1 _ |a Notten, Peter H. L.
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773 _ _ |a 10.1021/acsaem.1c02278
|g Vol. 4, no. 9, p. 10333 - 10343
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|t ACS applied energy materials
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|y 2021
|x 2574-0962
856 4 _ |u https://juser.fz-juelich.de/record/904167/files/acsaem.1c02278.pdf
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910 1 _ |a Eindhoven University of Technology
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