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@ARTICLE{Wuttig:904604,
author = {Wuttig, Matthias and Schön, Carl-Friedrich and Schumacher,
Mathias and Robertson, John and Golub, Pavlo and Bousquet,
Eric and Gatti, Carlo and Raty, Jean-Yves},
title = {{H}alide {P}erovskites: {A}dvanced {P}hotovoltaic
{M}aterials {E}mpowered by a {U}nique {B}onding {M}echanism},
journal = {Advanced functional materials},
volume = {16},
number = {2},
issn = {1057-9257},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2021-06174},
pages = {2110166 -},
year = {2022},
abstract = {Outstanding photovoltaic (PV) materials combine a set of
advantageous properties including large optical absorption
and high charge carrier mobility, facilitated by small
effective masses. Halide perovskites (ABX3, where X = I, Br,
or Cl) are among the most promising PV materials. Their
optoelectronic properties are governed by the BX bond,
which is responsible for the pronounced optical absorption
and the small effective masses of the charge carriers. These
properties are frequently attributed to the ns2
configuration of the B atom, i.e., Pb 6s2 or Sn 5s2
(“lone-pair”) states. The analysis of the PV properties
in conjunction with a quantum-chemical bond analysis reveals
a different scenario. The BX bond differs significantly
from ionic, metallic, or conventional 2c2e covalent
bonds. Instead it is better regarded as metavalent, since it
shares about one p-electron between adjacent atoms. The
resulting σ-bond, formally a 2c1e bond, is half-filled,
causing pronounced optical absorption. Electron transfer
between B and X atoms and lattice distortions open a
moderate bandgap resulting in charge carriers with small
effective masses. Hence, metavalent bonding explains
favorable PV properties of halide perovskites, as summarized
in a map for different bond types, which provides a
blueprint to design PV materials.},
cin = {PGI-10},
ddc = {530},
cid = {I:(DE-Juel1)PGI-10-20170113},
pnm = {5233 - Memristive Materials and Devices (POF4-523) /
Verbundprojekt: Neuro-inspirierte Technologien der
künstlichen Intelligenz für die Elektronik der Zukunft -
NEUROTEC -, Teilvorhaben: Forschungszentrum Jülich
(16ES1133K)},
pid = {G:(DE-HGF)POF4-5233 / G:(BMBF)16ES1133K},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000710103100001},
doi = {10.1002/adfm.202110166},
url = {https://juser.fz-juelich.de/record/904604},
}