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@ARTICLE{Chekol:904957,
      author       = {Chekol, Solomon Amsalu and Menzel, Stephan and Ahmad, Rana
                      Walied and Waser, Rainer and Hoffmann-Eifert, Susanne},
      title        = {{E}ffect of the {T}hreshold {K}inetics on the {F}ilament
                      {R}elaxation {B}ehavior of {A}g‐{B}ased {D}iffusive
                      {M}emristors},
      journal      = {Advanced functional materials},
      volume       = {32},
      number       = {15},
      issn         = {1057-9257},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-00271},
      pages        = {2111242 -},
      year         = {2022},
      abstract     = {Owing to their unique features such as thresholding and
                      self-relaxation behavior diffusive memristors built from
                      volatile electrochemical metallization (v-ECM) devices are
                      drawing attention in emerging memories and neuromorphic
                      computing areas such as temporal coding. Unlike the
                      switching kinetics of non-volatile ECM cells, the
                      thresholding and relaxation dynamics of diffusive memristors
                      are still under investigation. Comprehension of the kinetics
                      and identification of the underlying physical processes
                      during switching and relaxation are of utmost importance to
                      optimize and modulate the performance of threshold devices.
                      In this study, the switching dynamics of Ag/HfO2/Pt v-ECM
                      devices are investigated. Depending on the amplitude and
                      duration of applied voltage pulses, the threshold kinetics
                      and the filament relaxation are analyzed in a comprehensive
                      approach. This enables the identification of different
                      mechanisms as the rate-limiting steps for filament formation
                      and, consequently, to simulate the threshold kinetics using
                      a physical model modified from non-volatile ECM. New
                      insights gained from the combined threshold and relaxation
                      kinetics study outline the significance of the filament
                      formation and growth process on its relaxation time. This
                      knowledge can be directly transferred into the optimization
                      of the operation conditions of diffusive memristors in
                      neuromorphic circuits.},
      cin          = {PGI-7 / JARA-FIT / PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) /
                      Verbundprojekt: Neuro-inspirierte Technologien der
                      künstlichen Intelligenz für die Elektronik der Zukunft -
                      NEUROTEC -, Teilvorhaben: Forschungszentrum Jülich
                      (16ES1133K) / ACA - Advanced Computing Architectures
                      (SO-092)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(BMBF)16ES1133K / G:(DE-HGF)SO-092},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000733321000001},
      doi          = {10.1002/adfm.202111242},
      url          = {https://juser.fz-juelich.de/record/904957},
}