% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Kindelmann:905372,
      author       = {Kindelmann, Moritz and Weber, Moritz Lukas and Stamminger,
                      Mark and Buschhaus, Rahel and Breuer, Uwe and Bram, Martin
                      and Guillon, Olivier},
      title        = {{P}rocessing map to control the erosion of {Y} 2 {O} 3 in
                      fluorine based etching plasmas},
      journal      = {Journal of the American Ceramic Society},
      volume       = {105},
      number       = {5},
      issn         = {0002-7820},
      address      = {Westerville, Ohio},
      publisher    = {Soc.},
      reportid     = {FZJ-2022-00625},
      pages        = {3498-3509},
      year         = {2022},
      abstract     = {Due to the increasing number of applications for ceramic
                      components in reactive etching processes, the interest in
                      the specific erosion behavior of highly etch-resistant
                      materials like yttrium oxide (Y2O3) has increased in the
                      past years. Despite the large number of investigations
                      already existing in this field, a more general understanding
                      of the erosion mechanisms still lacks due to the limited
                      comparability of these investigations. The huge difference
                      in the kind of etching setups, processing parameters (bias
                      voltage and plasma gas composition), and sample
                      microstructures prevented consistent conclusions so far. To
                      achieve a more general understanding, this study
                      investigates the erosion behavior Y2O3 under a broad
                      spectrum of plasma etching parameters. Therefore, the bias
                      voltage is increased from 50 to 300 V and the plasma gas
                      composition is gradually changed from Ar-rich to CF4-rich
                      compositions. This systematic approach allows to directly
                      correlate the morphology changes caused by plasma erosion
                      with the related plasma etching parameters and enables to
                      better understand their influence on the depth of physical
                      and chemical interactions, surface damage, and etching rate.
                      We discovered three distinct erosion regimes, which exhibit
                      specific erosion characteristics. Using these observations,
                      a schematic processing map for Y2O3 was developed, which
                      could help to estimate the severity of the erosion attack
                      dependent on the processing parameters.},
      cin          = {ER-C-2 / ZEA-3 / IEK-1 / PGI-7 / JARA-FIT},
      ddc          = {660},
      cid          = {I:(DE-Juel1)ER-C-2-20170209 / I:(DE-Juel1)ZEA-3-20090406 /
                      I:(DE-Juel1)IEK-1-20101013 / I:(DE-Juel1)PGI-7-20110106 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {5353 - Understanding the Structural and Functional Behavior
                      of Solid State Systems (POF4-535) / 5233 - Memristive
                      Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5353 / G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000742762600001},
      doi          = {10.1111/jace.18334},
      url          = {https://juser.fz-juelich.de/record/905372},
}