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000905860 037__ $$aFZJ-2022-01067
000905860 041__ $$aEnglish
000905860 088__ $$2Other$$a4432
000905860 1001_ $$0P:(DE-Juel1)187430$$aWilleke, Leander$$b0$$eCorresponding author
000905860 245__ $$aCharacterization of 22 nm FD-SOI MOSFET Devices at Cryogenic Temperatures and Frequencies up to 20 GHz$$f - 2021-12-01
000905860 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag Jülich$$c2021
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000905860 4900_ $$aBerichte des Forschungszentrums Jülich$$v4432
000905860 502__ $$aMasterarbeit, Univ. Bochum, 2021$$bMasterarbeit$$cUniv. Bochum$$d2021
000905860 520__ $$aA comprehensive characterization of MOSFETs is conducted by extraction ofthe parameters in the small signal equivalent circuit. Measurements were performedin room temperature and in the cryogenic range down towards 6K.This work lays a foundation for simple simulation or at least the estimation ofchanging behaviour between different temperature ranges. While the used procedurescan likely be applied to other MOSFETs as well, in this work differenttransistors of the 22 nm technology node with a fully depleted silicon on buriedinsulator have been investigated.Additionally the facilitated cooling setup has been investigated to find out ifa measurement of the transistor’s noise figure is reliable. This seems to be notthe case, although it was possible to see the progression in measured noise fordifferent substrate temperatures and device sizes. Changes to the setup wereproposed in order to make more reliable measurements possible in the future.
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000905860 9141_ $$y2022
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