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@MASTERSTHESIS{Willeke:905860,
author = {Willeke, Leander},
title = {{C}haracterization of 22 nm {FD}-{SOI} {MOSFET} {D}evices
at {C}ryogenic {T}emperatures and {F}requencies up to 20
{GH}z},
volume = {4432},
school = {Univ. Bochum},
type = {Masterarbeit},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
Jülich},
reportid = {FZJ-2022-01067, 4432},
series = {Berichte des Forschungszentrums Jülich},
pages = {88},
year = {2021},
note = {Masterarbeit, Univ. Bochum, 2021},
abstract = {A comprehensive characterization of MOSFETs is conducted by
extraction ofthe parameters in the small signal equivalent
circuit. Measurements were performedin room temperature and
in the cryogenic range down towards 6K.This work lays a
foundation for simple simulation or at least the estimation
ofchanging behaviour between different temperature ranges.
While the used procedurescan likely be applied to other
MOSFETs as well, in this work differenttransistors of the 22
nm technology node with a fully depleted silicon on
buriedinsulator have been investigated.Additionally the
facilitated cooling setup has been investigated to find out
ifa measurement of the transistor’s noise figure is
reliable. This seems to be notthe case, although it was
possible to see the progression in measured noise
fordifferent substrate temperatures and device sizes.
Changes to the setup wereproposed in order to make more
reliable measurements possible in the future.},
cin = {ZEA-2},
cid = {I:(DE-Juel1)ZEA-2-20090406},
pnm = {5223 - Quantum-Computer Control Systems and Cryoelectronics
(POF4-522)},
pid = {G:(DE-HGF)POF4-5223},
typ = {PUB:(DE-HGF)3 / PUB:(DE-HGF)19},
url = {https://juser.fz-juelich.de/record/905860},
}