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| Hauptseite > Publikationsdatenbank > Characterization of 22 nm FD-SOI MOSFET Devices at Cryogenic Temperatures and Frequencies up to 20 GHz > print |
| Hauptseite > Publikationsdatenbank > Characterization of 22 nm FD-SOI MOSFET Devices at Cryogenic Temperatures and Frequencies up to 20 GHz > print |
| 001 | 905860 | ||
| 005 | 20250129092438.0 | ||
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| 041 | _ | _ | |a English |
| 088 | _ | _ | |a 4432 |2 Other |
| 100 | 1 | _ | |a Willeke, Leander |0 P:(DE-Juel1)187430 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Characterization of 22 nm FD-SOI MOSFET Devices at Cryogenic Temperatures and Frequencies up to 20 GHz |f - 2021-12-01 |
| 260 | _ | _ | |a Jülich |c 2021 |b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag Jülich |
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| 336 | 7 | _ | |a SUPERVISED_STUDENT_PUBLICATION |2 ORCID |
| 490 | 0 | _ | |a Berichte des Forschungszentrums Jülich |v 4432 |
| 502 | _ | _ | |a Masterarbeit, Univ. Bochum, 2021 |c Univ. Bochum |b Masterarbeit |d 2021 |
| 520 | _ | _ | |a A comprehensive characterization of MOSFETs is conducted by extraction ofthe parameters in the small signal equivalent circuit. Measurements were performedin room temperature and in the cryogenic range down towards 6K.This work lays a foundation for simple simulation or at least the estimation ofchanging behaviour between different temperature ranges. While the used procedurescan likely be applied to other MOSFETs as well, in this work differenttransistors of the 22 nm technology node with a fully depleted silicon on buriedinsulator have been investigated.Additionally the facilitated cooling setup has been investigated to find out ifa measurement of the transistor’s noise figure is reliable. This seems to be notthe case, although it was possible to see the progression in measured noise fordifferent substrate temperatures and device sizes. Changes to the setup wereproposed in order to make more reliable measurements possible in the future. |
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| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/905860/files/J%C3%BCl_4432.pdf |y OpenAccess |
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