Home > Publications database > An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/Off Ratio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing
 
Conference Presentation (Other) FZJ-2022-01159
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An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/Off Ratio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing

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2021

IEEE International Memory Workshop, IMW 2021, virtualvirtual, virtual, 13 May 2021 - 16 May 20212021-05-132021-05-16

Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
  2. JARA Institut Green IT (PGI-10)
  3. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
  2. Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC -, Teilvorhaben: Forschungszentrum Jülich (16ES1133K) (16ES1133K)
  3. BMBF-16ES1134 - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC - (BMBF-16ES1134) (BMBF-16ES1134)

Appears in the scientific report 2021
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The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-10
Institute Collections > PGI > PGI-7
Workflow collections > Public records
Publications database
 Record created 2022-01-26, last modified 2022-01-31
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