Home > Publications database > Behavior of cation vacancies in single-crystal and in thin-film SrTiO 3 : The importance of strontium vacancies and their defect associates > print |
001 | 906109 | ||
005 | 20230310131348.0 | ||
024 | 7 | _ | |a 10.1103/PhysRevMaterials.4.123404 |2 doi |
024 | 7 | _ | |a 2475-9953 |2 ISSN |
024 | 7 | _ | |a 2476-0455 |2 ISSN |
024 | 7 | _ | |a 2128/30649 |2 Handle |
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037 | _ | _ | |a FZJ-2022-01230 |
082 | _ | _ | |a 530 |
100 | 1 | _ | |a Gries, U. N. |0 P:(DE-HGF)0 |b 0 |
245 | _ | _ | |a Behavior of cation vacancies in single-crystal and in thin-film SrTiO 3 : The importance of strontium vacancies and their defect associates |
260 | _ | _ | |a College Park, MD |c 2020 |b APS |
336 | 7 | _ | |a article |2 DRIVER |
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336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1643901881_27542 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a ARTICLE |2 BibTeX |
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336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
536 | _ | _ | |a 5233 - Memristive Materials and Devices (POF4-523) |0 G:(DE-HGF)POF4-5233 |c POF4-523 |x 0 |f POF IV |
536 | _ | _ | |a DFG project 167917811 - SFB 917: Resistiv schaltende Chalkogenide für zukünftige Elektronikanwendungen: Struktur, Kinetik und Bauelementskalierung "Nanoswitches" (167917811) |0 G:(GEPRIS)167917811 |c 167917811 |x 1 |
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700 | 1 | _ | |a Kessel, M. |0 P:(DE-HGF)0 |b 1 |
700 | 1 | _ | |a Hensling, F. V. E. |0 P:(DE-Juel1)165926 |b 2 |
700 | 1 | _ | |a Dittmann, R. |0 P:(DE-Juel1)130620 |b 3 |
700 | 1 | _ | |a Martin, M. |0 P:(DE-HGF)0 |b 4 |
700 | 1 | _ | |a De Souza, R. A. |0 0000-0001-7721-4128 |b 5 |e Corresponding author |
773 | _ | _ | |a 10.1103/PhysRevMaterials.4.123404 |g Vol. 4, no. 12, p. 123404 |0 PERI:(DE-600)2898355-5 |n 12 |p 123404 |t Physical review materials |v 4 |y 2020 |x 2475-9953 |
856 | 4 | _ | |y OpenAccess |u https://juser.fz-juelich.de/record/906109/files/Cation_diffusion_SC_TF_revised.pdf |
856 | 4 | _ | |y OpenAccess |u https://juser.fz-juelich.de/record/906109/files/PhysRevMaterials.4.123404.pdf |
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