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@ARTICLE{Wang:906110,
author = {Wang, Jiangjing and Zhou, Chongjian and Yu, Yuan and Zhou,
Yuxing and Lu, Lu and Ge, Bangzhi and Cheng, Yudong and Jia,
Chun-Lin and Mazzarello, Riccardo and Shi, Zhongqi and
Wuttig, Matthias and Zhang, Wei},
title = {{E}nhancing thermoelectric performance of {S}b2{T}e3
through swapped bilayer defects},
journal = {Nano energy},
volume = {79},
issn = {2211-2855},
address = {Amsterdam [u.a.]},
publisher = {Elsevier},
reportid = {FZJ-2022-01231},
pages = {105484 -},
year = {2021},
abstract = {Lattice defects are typically used to tailor the
thermoelectric properties of materials. It is desirable that
such defects improve the electrical conductivity, while, at
the same time, reduce the thermal conductivity, for an
overall improvement on the thermoelectric properties of
materials. Here, we report on an extended defect in Sb2Te3
consisting of swapped bilayers with chemical intermixing of
Sb and Te atoms, which can be generated and effectively
manipulated in polycrystalline samples through synthetic
methods and thermal treatments. The swapped bilayers bridge
the spatial gaps between the Sb2Te3 quintuple-layer blocks,
enhancing the charge carrier mobility and thus the
electrical conductivity. These defects also result in a
reduced lattice thermal conductivity through suppressing
phonon transport. These synergistic effects contribute
together to an improved thermoelectric quality factor and an
enhanced figure of merit (zT) value in Sb2Te3.},
cin = {ER-C-1},
ddc = {660},
cid = {I:(DE-Juel1)ER-C-1-20170209},
pnm = {5351 - Platform for Correlative, In Situ and Operando
Characterization (POF4-535) / DFG project 167917811 - SFB
917: Resistiv schaltende Chalkogenide für zukünftige
Elektronikanwendungen: Struktur, Kinetik und
Bauelementskalierung "Nanoswitches" (167917811)},
pid = {G:(DE-HGF)POF4-5351 / G:(GEPRIS)167917811},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000620507900001},
doi = {10.1016/j.nanoen.2020.105484},
url = {https://juser.fz-juelich.de/record/906110},
}