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@ARTICLE{Svetlova:906136,
      author       = {Svetlova, Anastasia and Kireev, Dmitry and Beltramo,
                      Guillermo and Mayer, Dirk and Offenhäusser, Andreas},
      title        = {{O}rigins of {L}eakage {C}urrents on {E}lectrolyte-{G}ated
                      {G}raphene {F}ield-{E}ffect {T}ransistors},
      journal      = {ACS applied electronic materials},
      volume       = {3},
      number       = {12},
      issn         = {2637-6113},
      address      = {Washington, DC},
      publisher    = {ACS Publications},
      reportid     = {FZJ-2022-01249},
      pages        = {5355 - 5364},
      year         = {2021},
      abstract     = {Graphene field-effect transistors are widely used for
                      development of biosensors. However, certain fundamental
                      questions about details of their functioning have not been
                      fully understood yet. One of these questions is the presence
                      of gate/leakage currents in the electrolyte-gated
                      configuration. Here, we report our observations and causes
                      of this phenomenon on chemical vapor deposition (CVD)-grown
                      graphene. We observed transistor’s gate currents occurring
                      at the surface of graphene exposed to the electrolyte. Gate
                      currents are capacitive when the graphene channel is doped
                      by holes and Faradic when it is doped by electrons in
                      field-effect measurements. We prove that Faradic currents
                      are attributed to the reduction of oxygen dissolved in the
                      aqueous solution and their magnitude increases with each
                      measurement. We employed cyclic voltammetry with a redox
                      probe Fc(MeOH)2 to characterize changes in the graphene
                      structure that are responsible for this activation.
                      Collectively, our results reveal that through the course of
                      catalytic oxygen reduction on the transistor’s surface,
                      its electroactivity toward an out-of-plane heterogeneous
                      electron transfer increases.},
      cin          = {IBI-2 / IBI-3},
      ddc          = {620},
      cid          = {I:(DE-Juel1)IBI-2-20200312 / I:(DE-Juel1)IBI-3-20200312},
      pnm          = {5244 - Information Processing in Neuronal Networks
                      (POF4-524)},
      pid          = {G:(DE-HGF)POF4-5244},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000756999800019},
      doi          = {10.1021/acsaelm.1c00854},
      url          = {https://juser.fz-juelich.de/record/906136},
}