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@ARTICLE{Milano:906151,
      author       = {Milano, Gianluca and Luebben, Michael and Laurenti, Marco
                      and Boarino, Luca and Ricciardi, Carlo and Valov, Ilia},
      title        = {{S}tructure‐{D}ependent {I}nfluence of {M}oisture on
                      {R}esistive {S}witching {B}ehavior of {Z}n{O} {T}hin
                      {F}ilms},
      journal      = {Advanced materials interfaces},
      volume       = {8},
      number       = {16},
      issn         = {2196-7350},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-01264},
      pages        = {2100915 -},
      year         = {2021},
      abstract     = {Resistive switching mechanisms underlying memristive
                      devices are widely investigated, and the importance as well
                      as influence of ambient conditions on the electrical
                      performances of memristive cells are already recognized.
                      However, detailed understanding of the ambient effect on the
                      switching mechanism still remains a challenge. This work
                      presents an experimental investigation on the effect of
                      moisture on resistive switching performances of ZnO-based
                      electrochemical metallization memory cells. ZnO thin films
                      are grown by chemical vapor deposition (CVD) and radio
                      frequency sputtering. Water molecules are observed to
                      influence electrical resistance of ZnO by affecting the
                      electronic conduction mechanism and by providing additional
                      species for ionic conduction. By influencing dissolution and
                      migration of ionic species underlying resistive switching
                      events, moisture is reported to tune resistive switching
                      parameters. In particular, the presence of H2O is
                      responsible for a decrease of the forming and SET voltages
                      and an increase of the ON/OFF resistance ratio in both CVD
                      and sputtered films. The effect of moisture on resistive
                      switching performance is found to be more pronounced in case
                      of sputtered films where the reduced grain size is
                      responsible for an increased adsorption of water molecules
                      and an increased amount of possible pathways for ion
                      migration.},
      cin          = {PGI-7},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000678192200001},
      doi          = {10.1002/admi.202100915},
      url          = {https://juser.fz-juelich.de/record/906151},
}