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| Home > Publications database > Structure‐Dependent Influence of Moisture on Resistive Switching Behavior of ZnO Thin Films > print |
| 001 | 906151 | ||
| 005 | 20230123101855.0 | ||
| 024 | 7 | _ | |a 10.1002/admi.202100915 |2 doi |
| 024 | 7 | _ | |a 2128/31321 |2 Handle |
| 024 | 7 | _ | |a altmetric:110628252 |2 altmetric |
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| 037 | _ | _ | |a FZJ-2022-01264 |
| 082 | _ | _ | |a 600 |
| 100 | 1 | _ | |a Milano, Gianluca |0 P:(DE-HGF)0 |b 0 |
| 245 | _ | _ | |a Structure‐Dependent Influence of Moisture on Resistive Switching Behavior of ZnO Thin Films |
| 260 | _ | _ | |a Weinheim |c 2021 |b Wiley-VCH |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a Resistive switching mechanisms underlying memristive devices are widely investigated, and the importance as well as influence of ambient conditions on the electrical performances of memristive cells are already recognized. However, detailed understanding of the ambient effect on the switching mechanism still remains a challenge. This work presents an experimental investigation on the effect of moisture on resistive switching performances of ZnO-based electrochemical metallization memory cells. ZnO thin films are grown by chemical vapor deposition (CVD) and radio frequency sputtering. Water molecules are observed to influence electrical resistance of ZnO by affecting the electronic conduction mechanism and by providing additional species for ionic conduction. By influencing dissolution and migration of ionic species underlying resistive switching events, moisture is reported to tune resistive switching parameters. In particular, the presence of H2O is responsible for a decrease of the forming and SET voltages and an increase of the ON/OFF resistance ratio in both CVD and sputtered films. The effect of moisture on resistive switching performance is found to be more pronounced in case of sputtered films where the reduced grain size is responsible for an increased adsorption of water molecules and an increased amount of possible pathways for ion migration. |
| 536 | _ | _ | |a 5233 - Memristive Materials and Devices (POF4-523) |0 G:(DE-HGF)POF4-5233 |c POF4-523 |f POF IV |x 0 |
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| 700 | 1 | _ | |a Luebben, Michael |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Laurenti, Marco |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Boarino, Luca |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Ricciardi, Carlo |0 0000-0002-4703-7949 |b 4 |e Corresponding author |
| 700 | 1 | _ | |a Valov, Ilia |0 P:(DE-Juel1)131014 |b 5 |e Corresponding author |u fzj |
| 773 | _ | _ | |a 10.1002/admi.202100915 |g Vol. 8, no. 16, p. 2100915 - |0 PERI:(DE-600)2750376-8 |n 16 |p 2100915 - |t Advanced materials interfaces |v 8 |y 2021 |x 2196-7350 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/906151/files/Adv%20Materials%20Inter%20-%202021%20-%20Milano%20-%20Structure%E2%80%90Dependent%20Influence%20of%20Moisture%20on%20Resistive%20Switching%20Behavior%20of%20ZnO%20Thin.pdf |y OpenAccess |
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