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@ARTICLE{Heisig:906312,
      author       = {Heisig, Thomas and Lange, Kristof and Gutsche, Alexander
                      and Goß, Kalle Thorben and Hambsch, Sebastian and
                      Locatelli, Andrea and Menteş, Tevfik Onur and Genuzio,
                      Francesca and Menzel, Stephan and Dittmann, Regina},
      title        = {{C}hemical {S}tructure of {C}onductive {F}ilaments in
                      {T}antalum {O}xide {M}emristive {D}evices and {I}ts
                      {I}mplications for the {F}ormation {M}echanism},
      journal      = {Advanced electronic materials},
      volume       = {8},
      number       = {8},
      issn         = {2199-160X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH Verlag GmbH $\&$ Co. KG},
      reportid     = {FZJ-2022-01362},
      pages        = {2100936 -},
      year         = {2022},
      abstract     = {Resistive switching in metal oxides is believed to be
                      caused by a temperature and electric field driven
                      redistribution of oxygen vacancies within a nanometer sized
                      conductive filament. Accordingly, gaining detailed
                      information about the chemical composition of conductive
                      filaments is of key importance for a comprehensive
                      understanding of the switching process. In this work,
                      spectromicroscopy is used to probe the electronic structure
                      of conductive filaments in Ta2O5-based memristive devices.
                      It is found that resistive switching leads to the formation
                      of a conductive filament with an oxygen vacancy
                      concentration of $≈20\%.$ Spectroscopic insights provide
                      detailed information about the chemical state of the
                      tantalum cations and show that the filament is not composed
                      of a metallic Ta0 phase. As an extreme case, devices after
                      an irreversible dielectric breakdown are investigated. These
                      devices feature larger conductive channels with higher
                      oxygen vacancy concentrations. Using the experimental data
                      as input for finite element simulations, the role of
                      thermodiffusion for the formation process of conductive
                      filaments is revealed. It is demonstrated that
                      thermodiffusion is not the dominating effect for the
                      filament formation here but might play a role in
                      accelerating the forming process, as well as in the
                      stabilization of the filament.},
      cin          = {PGI-7 / JARA-FIT / PGI-10},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) / DFG
                      project 167917811 - SFB 917: Resistiv schaltende
                      Chalkogenide für zukünftige Elektronikanwendungen:
                      Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
                      (167917811) / ACA - Advanced Computing Architectures
                      (SO-092) / BMBF-16ES1134 - Verbundprojekt: Neuro-inspirierte
                      Technologien der künstlichen Intelligenz für die
                      Elektronik der Zukunft - NEUROTEC - (BMBF-16ES1134)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(GEPRIS)167917811 /
                      G:(DE-HGF)SO-092 / G:(DE-82)BMBF-16ES1134},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000756639000001},
      doi          = {10.1002/aelm.202100936},
      url          = {https://juser.fz-juelich.de/record/906312},
}