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@ARTICLE{Heisig:906312,
author = {Heisig, Thomas and Lange, Kristof and Gutsche, Alexander
and Goß, Kalle Thorben and Hambsch, Sebastian and
Locatelli, Andrea and Menteş, Tevfik Onur and Genuzio,
Francesca and Menzel, Stephan and Dittmann, Regina},
title = {{C}hemical {S}tructure of {C}onductive {F}ilaments in
{T}antalum {O}xide {M}emristive {D}evices and {I}ts
{I}mplications for the {F}ormation {M}echanism},
journal = {Advanced electronic materials},
volume = {8},
number = {8},
issn = {2199-160X},
address = {Weinheim},
publisher = {Wiley-VCH Verlag GmbH $\&$ Co. KG},
reportid = {FZJ-2022-01362},
pages = {2100936 -},
year = {2022},
abstract = {Resistive switching in metal oxides is believed to be
caused by a temperature and electric field driven
redistribution of oxygen vacancies within a nanometer sized
conductive filament. Accordingly, gaining detailed
information about the chemical composition of conductive
filaments is of key importance for a comprehensive
understanding of the switching process. In this work,
spectromicroscopy is used to probe the electronic structure
of conductive filaments in Ta2O5-based memristive devices.
It is found that resistive switching leads to the formation
of a conductive filament with an oxygen vacancy
concentration of $≈20\%.$ Spectroscopic insights provide
detailed information about the chemical state of the
tantalum cations and show that the filament is not composed
of a metallic Ta0 phase. As an extreme case, devices after
an irreversible dielectric breakdown are investigated. These
devices feature larger conductive channels with higher
oxygen vacancy concentrations. Using the experimental data
as input for finite element simulations, the role of
thermodiffusion for the formation process of conductive
filaments is revealed. It is demonstrated that
thermodiffusion is not the dominating effect for the
filament formation here but might play a role in
accelerating the forming process, as well as in the
stabilization of the filament.},
cin = {PGI-7 / JARA-FIT / PGI-10},
ddc = {621.3},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
I:(DE-Juel1)PGI-10-20170113},
pnm = {5233 - Memristive Materials and Devices (POF4-523) / DFG
project 167917811 - SFB 917: Resistiv schaltende
Chalkogenide für zukünftige Elektronikanwendungen:
Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
(167917811) / ACA - Advanced Computing Architectures
(SO-092) / BMBF-16ES1134 - Verbundprojekt: Neuro-inspirierte
Technologien der künstlichen Intelligenz für die
Elektronik der Zukunft - NEUROTEC - (BMBF-16ES1134)},
pid = {G:(DE-HGF)POF4-5233 / G:(GEPRIS)167917811 /
G:(DE-HGF)SO-092 / G:(DE-82)BMBF-16ES1134},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000756639000001},
doi = {10.1002/aelm.202100936},
url = {https://juser.fz-juelich.de/record/906312},
}