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@ARTICLE{Bosan:906344,
      author       = {Bosan, Hassan Ali and Beyer, Wolfhard and Breuer, Uwe and
                      Finger, Friedhelm and Hambach, Nelli and Nuys, Maurice and
                      Pennartz, Frank and Amkreutz, Daniel and Haas, Stefan},
      title        = {{I}nvestigation of {T}hermal {S}tability {E}ffects of
                      {T}hick {H}ydrogenated {A}morphous {S}ilicon {P}recursor
                      {L}ayers for {L}iquid‐{P}hase {C}rystallized {S}ilicon},
      journal      = {Physica status solidi / A},
      volume       = {218},
      number       = {9},
      issn         = {0031-8965},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-01382},
      pages        = {2000435 -},
      year         = {2021},
      abstract     = {The thermal stability of thick (≈4 μm) plasma-grown
                      hydrogenated amorphous silicon (a-Si:H) layers on glass upon
                      application of a rather rapid annealing step is
                      investigated. Such films are of interest as precursor layers
                      for laser liquid-phase crystallized silicon solar cells.
                      However, at least half-day annealing at T ≈550 °C is
                      considered to be necessary so far to reduce the hydrogen (H)
                      content and thus avoid blistering and peeling during the
                      crystallization process due to H. By varying the deposition
                      conditions of a-Si:H, layers of rather different thermal
                      stability are fabricated. Changes in the surface morphology
                      of these a-Si:H layers are investigated using scanning
                      electron microscopy and profilometry measurements. Hydrogen
                      effusion, secondary-ion mass spectrometry (SIMS) depth
                      profiling, and Raman spectroscopy measurements are also
                      carried out. In summary, amorphous silicon precursor layers
                      are fabricated that can be heated within 30 min to a
                      temperature of 550 °C without peeling and major surface
                      morphological changes. Successful laser liquid-phase
                      crystallization of such material is demonstrated. The
                      physical nature of a-Si:H material stability/instability
                      upon application of rapid heating is studied.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1212 - Materials and Interfaces (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1212},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000635242400001},
      doi          = {10.1002/pssa.202000435},
      url          = {https://juser.fz-juelich.de/record/906344},
}