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@ARTICLE{Belthle:906506,
      author       = {Belthle, Kendra S. and Gries, Ute N. and Mueller, Michael
                      P. and Kemp, Dennis and Prakash, Abhinav and Rose,
                      Marc-André and Börgers, Jacqueline M. and Jalan, Bharat
                      and Gunkel, Felix and De Souza, Roger A.},
      title        = {{Q}uantitative {D}etermination of {N}ative
                      {P}oint‐{D}efect {C}oncentrations at the ppm {L}evel in
                      {U}n‐{D}oped {B}a{S}n{O} 3 {T}hin {F}ilms},
      journal      = {Advanced functional materials},
      volume       = {32},
      number       = {19},
      issn         = {1057-9257},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-01485},
      pages        = {2113023 -},
      year         = {2022},
      abstract     = {The high-mobility, wide-bandgap perovskite oxide BaSnO3 is
                      taken as a model system to demonstrate that the native point
                      defects present in un-doped, epitaxial thin films grown by
                      hybrid molecular beam epitaxy can be identified and their
                      concentrations at the ppm level determined quantitatively.
                      An elevated-temperature, multi-faceted approach is shown to
                      be necessary: oxygen tracer diffusion experiments with
                      secondary ion mass spectrometry analysis; molecular dynamics
                      simulations of oxygen-vacancy diffusion; electronic
                      conductivity studies as a function of oxygen activity and
                      temperature; and Hall-effect measurements. The results
                      indicate that the oxygen-vacancy concentration cannot be
                      lowered below 1017.3 cm−3 because of a background level of
                      barium vacancies (of this concentration), introduced during
                      film growth. The multi-faceted approach also yields the
                      electron mobility over a wide temperature range,
                      coefficients of oxygen surface exchange and oxygen-vacancy
                      diffusion, and the reduction enthalpy. The consequences of
                      the results for the lowest electron concentration achievable
                      in BaSnO3 samples, for the ease of oxide reduction and for
                      the stability of reduced films with respect to oxidation,
                      are discussed.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000755357100001},
      doi          = {10.1002/adfm.202113023},
      url          = {https://juser.fz-juelich.de/record/906506},
}