TY  - JOUR
AU  - Wilken, Karen
AU  - Güneş, Mehmet
AU  - Wang, Shuo
AU  - Finger, Friedhelm
AU  - Smirnov, Vladimir
TI  - Understanding the Origin of Thermal Annealing Effects in Low‐Temperature Amorphous Silicon Films and Solar Cells
JO  - Physica status solidi / A
VL  - 219
IS  - 9
SN  - 0031-8965
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2022-01759
SP  - 2100451 -
PY  - 2022
AB  - A detailed investigation of the effects of prolonged postdeposition annealing on the performance of amorphous silicon (a-Si:H) solar cells and the properties of individual a-Si:H layers that are fabricated at low temperature of 120 °C is presented. A substantial improvement in all parameters of the current–voltage curves of these solar cells is observed upon annealing, consistent with an improvement in the collection voltage of the solar cells. Modifications of p-type layers during deposition of the solar cells are found to make no significant contribution to the annealing behavior of solar cells, while variations in the properties of n-type and intrinsic layers contribute substantially. The results indicate that the largest contribution to the annealing effect originates from changes in the electron μτ-product in the intrinsic absorber layer upon annealing, while changes in hole μτ-products have a minor contribution to the annealing effect in the solar cell. Besides a lack of significant changes in the number of recombination centers upon annealing, an improvement in the external quantum efficiency curves upon annealing may be accurately reproduced in computer simulations by assuming an increase in the band mobilities of both electrons and holes.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000770361500001
DO  - DOI:10.1002/pssa.202100451
UR  - https://juser.fz-juelich.de/record/906934
ER  -