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@ARTICLE{Wilken:906934,
      author       = {Wilken, Karen and Güneş, Mehmet and Wang, Shuo and
                      Finger, Friedhelm and Smirnov, Vladimir},
      title        = {{U}nderstanding the {O}rigin of {T}hermal {A}nnealing
                      {E}ffects in {L}ow‐{T}emperature {A}morphous {S}ilicon
                      {F}ilms and {S}olar {C}ells},
      journal      = {Physica status solidi / A},
      volume       = {219},
      number       = {9},
      issn         = {0031-8965},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-01759},
      pages        = {2100451 -},
      year         = {2022},
      abstract     = {A detailed investigation of the effects of prolonged
                      postdeposition annealing on the performance of amorphous
                      silicon (a-Si:H) solar cells and the properties of
                      individual a-Si:H layers that are fabricated at low
                      temperature of 120 °C is presented. A substantial
                      improvement in all parameters of the current–voltage
                      curves of these solar cells is observed upon annealing,
                      consistent with an improvement in the collection voltage of
                      the solar cells. Modifications of p-type layers during
                      deposition of the solar cells are found to make no
                      significant contribution to the annealing behavior of solar
                      cells, while variations in the properties of n-type and
                      intrinsic layers contribute substantially. The results
                      indicate that the largest contribution to the annealing
                      effect originates from changes in the electron μτ-product
                      in the intrinsic absorber layer upon annealing, while
                      changes in hole μτ-products have a minor contribution to
                      the annealing effect in the solar cell. Besides a lack of
                      significant changes in the number of recombination centers
                      upon annealing, an improvement in the external quantum
                      efficiency curves upon annealing may be accurately
                      reproduced in computer simulations by assuming an increase
                      in the band mobilities of both electrons and holes.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {899 - ohne Topic (POF4-899)},
      pid          = {G:(DE-HGF)POF4-899},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000770361500001},
      doi          = {10.1002/pssa.202100451},
      url          = {https://juser.fz-juelich.de/record/906934},
}