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@ARTICLE{Andrade:906949,
      author       = {Andrade, Jaime M. M. and Rosário, Carlos M. M. and Menzel,
                      Stephan and Waser, Rainer and Sobolev, Nikolai A.},
      title        = {{A}pplication of the {Q}uantum-{P}oint-{C}ontact
                      {F}ormalism to {M}odel the {F}ilamentary {C}onduction in
                      {T}a 2 {O} 5 -{B}ased {R}esistive {S}witching {D}evices},
      journal      = {Physical review applied},
      volume       = {17},
      number       = {3},
      issn         = {2331-7019},
      address      = {College Park, Md. [u.a.]},
      publisher    = {American Physical Society},
      reportid     = {FZJ-2022-01767},
      pages        = {034062},
      year         = {2022},
      abstract     = {Redox-based resistive random access memories (ReRAMs) are
                      promising candidate devices for new memory and computing
                      paradigms. However, the fundamental mechanisms that rule the
                      conduction in these devices are still heavily debated. The
                      present work focuses on studying one model for the
                      conduction, the quantum point contact (QPC), and
                      specifically a single-subband approximation (SSA) to this
                      model. With this intent, Pt(20 nm)/Ta(15 nm)Ta2O5(5
                      nm)/Pt(20 nm) resistive switching devices are fabricated and
                      electrically characterized by measuring current-voltage
                      (I-V) curves in both resistance states. The QPC model has
                      been found to be hard to apply, as the starting parameters
                      have a strong influence on the fitting results. On the other
                      hand, the SSA has proved its ability to provide good fits to
                      the data and to do so better than other typical conduction
                      mechanisms considered. However, its physical basis is
                      criticized and it is concluded that in the devices studied,
                      multiple subbands likely contribute to the conduction, in
                      direct opposition to the assumptions made in such an
                      approximation. A reinterpretation of the parameters of the
                      SSA is proposed, to reconcile the increased performance with
                      greater physical accuracy. Beyond that, the main challenges
                      and difficulties regarding the application of the QPC to the
                      case of valence-change-based ReRAM are discussed.},
      cin          = {PGI-7 / JARA-FIT / PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000783556500001},
      doi          = {10.1103/PhysRevApplied.17.034062},
      url          = {https://juser.fz-juelich.de/record/906949},
}