% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Denneulin:907141,
      author       = {Denneulin, T. and Everhardt, A. S.},
      title        = {{A} transmission electron microscopy study of low-strain
                      epitaxial {B}a{T}i{O} 3 grown onto {N}d{S}c{O} 3},
      journal      = {Journal of physics / Condensed matter},
      volume       = {34},
      number       = {23},
      issn         = {0953-8984},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2022-01864},
      pages        = {235701},
      year         = {2022},
      abstract     = {Ferroelectric materials exhibit a strong coupling between
                      strain and electrical polarization. In epitaxial thin films,
                      the strain induced by the substrate can be used to tune the
                      domain structure. Substrates of rare-earth scandates are
                      sometimes selected for the growth of ferroelectric oxides
                      because of their close lattice match, which allows the
                      growth of low-strain dislocation-free layers. Transmission
                      electron microscopy (TEM) is a frequently used technique for
                      investigating ferroelectric domains at the nanometer-scale.
                      However, it requires to thin the specimen down to electron
                      transparency, which can modify the strain and the
                      electrostatic boundary conditions. Here, we have
                      investigated a 320 nm thick epitaxial layer of BaTiO3 grown
                      onto an orthorhombic substrate of NdScO3 with interfacial
                      lattice strains of $−0.45\%$ and $−0.05\%$ along the two
                      in-plane directions. We show that the domain structure of
                      the layer can be significantly altered by TEM sample
                      preparation depending on the orientation and the geometry of
                      the lamella. In the as-grown state, the sample shows an
                      anisotropic a/c ferroelastic domain pattern in the direction
                      of largest strain. If a TEM lamella is cut perpendicular to
                      this direction so that strain is released, a new domain
                      pattern is obtained, which consists of bundles of thin
                      horizontal stripes parallel to the interfaces. These stripe
                      domains correspond to a sheared crystalline structure
                      (orthorhombic or monoclinic) with inclined polarization
                      vectors and with at least four variants of polarization. The
                      stripe domains are distributed in triangular-shaped 180°
                      domains where the average polarization is parallel to the
                      growth direction. The influence of external electric fields
                      on this domain structure was investigated using in situ
                      biasing and dark-field imaging in TEM.},
      cin          = {ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {5351 - Platform for Correlative, In Situ and Operando
                      Characterization (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5351},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000778395400001},
      doi          = {10.1088/1361-648X/ac5db3},
      url          = {https://juser.fz-juelich.de/record/907141},
}