% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Rosenbach:907157,
      author       = {Rosenbach, Daniel and Moors, Kristof and Jalil, Abdur R.
                      and Kölzer, Jonas and Zimmermann, Erik and Schubert,
                      Jürgen and Karimzadah, Soraya and Mussler, Gregor and
                      Schüffelgen, Peter and Grützmacher, Detlev and Lüth, Hans
                      and Schäpers, Thomas},
      title        = {{G}ate-induced decoupling of surface and bulk state
                      properties in selectively-deposited {B}i$_2${T}e$_3$
                      nanoribbons},
      journal      = {SciPost Physics Core},
      volume       = {5},
      number       = {1},
      issn         = {2666-9366},
      address      = {Amsterdam},
      publisher    = {SciPost Foundation},
      reportid     = {FZJ-2022-01870},
      pages        = {017},
      year         = {2022},
      abstract     = {Three-dimensional topological insulators (TIs) host helical
                      Dirac surface states at the interface with a trivial
                      insulator. In quasi-one-dimensional TI nanoribbon structures
                      the wave function of surface charges extends
                      phase-coherently along the perimeter of the nanoribbon,
                      resulting in a quantization of transverse surface modes.
                      Furthermore, as the inherent spin-momentum locking results
                      in a Berry phase offset of π of self-interfering charge
                      carriers an energy gap within the surface state dispersion
                      appears and all states become spin-degenerate. We
                      investigate and compare the magnetic field dependent surface
                      state dispersion in selectively deposited Bi2Te3 TI micro-
                      and nanoribbon structures by analysing the gate voltage
                      dependent magnetoconductance at cryogenic temperatures.
                      While in wide microribbon devices the field effect mainly
                      changes the amount of bulk charges close to the top surface
                      we identify coherent transverse surface states along the
                      perimeter of the nanoribbon devices responding to a change
                      in top gate potential. We quantify the energetic spacing in
                      between these quantized transverse subbands by using an
                      electrostatic model that treats an initial difference in
                      charge carrier densities on the top and bottom surface as
                      well as remaining bulk charges. In the gate voltage
                      dependent transconductance we find oscillations that change
                      their relative phase by π at half-integer values of the
                      magnetic flux quantum applied coaxial to the nanoribbon,
                      which is a signature for a magnetic flux dependent
                      topological phase transition in narrow, selectively
                      deposited TI nanoribbon devices.},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5222 - Exploratory Qubits (POF4-522)},
      pid          = {G:(DE-HGF)POF4-5222},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000853259800017},
      doi          = {10.21468/SciPostPhysCore.5.1.017},
      url          = {https://juser.fz-juelich.de/record/907157},
}