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@ARTICLE{Hoseinpur:907233,
      author       = {Hoseinpur, Arman and Sergeev, Dmitry and Müller, Michael
                      and Safarian, Jafar},
      title        = {{O}n the {P}hosphorus {E}vaporation from {L}iquid {S}ilicon
                      by {K}nudsen {E}ffusion {M}ass {S}pectrometry},
      journal      = {Metallurgical and materials transactions / B},
      volume       = {53},
      number       = {2},
      issn         = {0360-2141},
      address      = {New York, NY},
      publisher    = {Springer Sciences $\&$ Business Media},
      reportid     = {FZJ-2022-01912},
      pages        = {1066 - 1081},
      year         = {2022},
      abstract     = {Silicon refining for solar applications is intensively on
                      demand, and removal of phosphorus from Si is one of the most
                      challenging steps. Evaporation of P from liquid Si in a
                      vacuum refining process is the most efficient method for P
                      removal from Si, and this research deals with the insight
                      mechanisms of P evaporation from liquid Si. In this
                      research, the gaseous species evaporating from the dilute
                      liquid solutions of phosphorus in silicon were studied
                      experimentally, and it was shown that phosphorus evaporates
                      in the form of P, P2, P4, P3, SiP, Si2P, Si3P, and SiP2 at
                      elevated temperatures. Except P and P2, the other molecules
                      were detected experimentally for the first time, and Si3P
                      was detected as a new compound in the gas phase. Knudsen
                      effusion mass spectrometry technique was applied to
                      characterize the evaporation of phosphorus from liquid Si
                      samples containing 100, 1250, and 3000 ppmw phosphorus. The
                      evaporation of phosphorus from liquid Si was studied by
                      isothermal and polythermal experiments, up to 1840 °C. The
                      vapor pressures of various P-containing molecules (P, P2,
                      P4, SiP, Si2P) at 1442 °C were measured as a function of
                      phosphorus fraction in liquid silicon. Results indicated
                      that a major part of the phosphorus evaporates in the form
                      of silicon phosphides and P4, especially when the sample
                      temperature exceeds 1750 °C. When initial phosphorus was
                      100 ppmw, about 71 pct of phosphorus evaporation was by
                      means of silicon phosphides and P4. The mechanisms of
                      phosphorus evaporation from liquid Si are proposed, which
                      depend on the melt composition and temperature. It occurs
                      through phosphorus species evaporation independently or via
                      the decomposition of transient silicon phosphides at the
                      surface or through the direct evaporation of silicon
                      phosphides at the melt surface.},
      cin          = {IEK-2},
      ddc          = {660},
      cid          = {I:(DE-Juel1)IEK-2-20101013},
      pnm          = {1243 - Thermal Energy Storage (POF4-124)},
      pid          = {G:(DE-HGF)POF4-1243},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000754127400001},
      doi          = {10.1007/s11663-022-02445-1},
      url          = {https://juser.fz-juelich.de/record/907233},
}