% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Faley:907278,
      author       = {Faley, M. I. and Fiadziushkin, Hleb and Frohn, Benedikt and
                      Schüffelgen, P. and Dunin-Borkowski, R. E.},
      title        = {{T}i{N} nanobridge {J}osephson junctions and nano{SQUID}s
                      on {S}i{N}-buffered {S}i},
      journal      = {Superconductor science and technology},
      volume       = {35},
      number       = {6},
      issn         = {0953-2048},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2022-01940},
      pages        = {065001 -},
      year         = {2022},
      abstract     = {We report the fabrication and properties of titanium
                      nitride (TiN) nanobridge Josephson junctions (nJJs) and
                      nanoscale superconducting quantum interference devices
                      (nanoSQUIDs) on SiN-buffered Si substrates. The superior
                      corrosion resistance, large coherence length, suitable
                      superconducting transition temperature and highly selective
                      reactive ion etching (RIE) of TiN compared to e-beam resists
                      and the SiN buffer layer allow for reproducible preparation
                      and result in long-term stability of the TiN nJJs.
                      High-resolution transmission electron microscopy reveals a
                      columnar structure of the TiN film on an amorphous SiN
                      buffer layer. High-resolution scanning electron microscopy
                      reveals the variable thickness shape of the nJJs. A
                      combination of wet etching in $20\%$ potassium hydroxide and
                      RIE is used for bulk nanomachining of nanoSQUID cantilevers.
                      More than 20 oscillations of the V(B) dependence of the
                      nanoSQUIDs with a period of ∼6 mT and hysteresis-free I(V)
                      characteristics (CVCs) of the all-TiN nJJs are observed at
                      4.2 K. CVCs of the low-Ic all-TiN nJJs follow theoretical
                      predictions for dirty superconductors down to ∼10 mK, with
                      the critical current saturated below ∼0.6 K. These results
                      pave the way for superconducting electronics based on nJJs
                      operating non-hysteretically at 4.2 K, as well as for
                      all-TiN qubits operating at sub-100 mK temperatures.},
      cin          = {ER-C-1 / PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209 / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5351 - Platform for Correlative, In Situ and Operando
                      Characterization (POF4-535) / 5222 - Exploratory Qubits
                      (POF4-522)},
      pid          = {G:(DE-HGF)POF4-5351 / G:(DE-HGF)POF4-5222},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000784122300001},
      doi          = {10.1088/1361-6668/ac64cd},
      url          = {https://juser.fz-juelich.de/record/907278},
}