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024 7 _ |a 10.1088/1361-6668/ac64cd
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037 _ _ |a FZJ-2022-01940
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100 1 _ |a Faley, M. I.
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245 _ _ |a TiN nanobridge Josephson junctions and nanoSQUIDs on SiN-buffered Si
260 _ _ |a Bristol
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520 _ _ |a We report the fabrication and properties of titanium nitride (TiN) nanobridge Josephson junctions (nJJs) and nanoscale superconducting quantum interference devices (nanoSQUIDs) on SiN-buffered Si substrates. The superior corrosion resistance, large coherence length, suitable superconducting transition temperature and highly selective reactive ion etching (RIE) of TiN compared to e-beam resists and the SiN buffer layer allow for reproducible preparation and result in long-term stability of the TiN nJJs. High-resolution transmission electron microscopy reveals a columnar structure of the TiN film on an amorphous SiN buffer layer. High-resolution scanning electron microscopy reveals the variable thickness shape of the nJJs. A combination of wet etching in 20% potassium hydroxide and RIE is used for bulk nanomachining of nanoSQUID cantilevers. More than 20 oscillations of the V(B) dependence of the nanoSQUIDs with a period of ∼6 mT and hysteresis-free I(V) characteristics (CVCs) of the all-TiN nJJs are observed at 4.2 K. CVCs of the low-Ic all-TiN nJJs follow theoretical predictions for dirty superconductors down to ∼10 mK, with the critical current saturated below ∼0.6 K. These results pave the way for superconducting electronics based on nJJs operating non-hysteretically at 4.2 K, as well as for all-TiN qubits operating at sub-100 mK temperatures.
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700 1 _ |a Frohn, Benedikt
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700 1 _ |a Schüffelgen, P.
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700 1 _ |a Dunin-Borkowski, R. E.
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773 _ _ |a 10.1088/1361-6668/ac64cd
|g Vol. 35, no. 6, p. 065001 -
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|t Superconductor science and technology
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