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@INPROCEEDINGS{Bouhadjar:907337,
author = {Bouhadjar, Younes and Siegel, Sebastian and Tetzlaff, Tom
and Diesmann, Markus and Waser, R. and Wouters, Dirk J.},
title = {{S}equence learning in a spiking neural network with
memristive synapses},
school = {RWTH Aachen},
reportid = {FZJ-2022-01972},
year = {2022},
abstract = {Brain-inspired computing proposes a set of algorithmic
principles that hold promise for advancing artificial
intelligence. They endow systems with self-learning
capabilities, efficient energy usage, and high storage
capacity. A core concept that lies at the heart of brain
computation is sequence learning and prediction. This form
of computation is essential for almost all our daily tasks
such as movement generation, perception, and language.
Understanding how the brain performs such a computation is
not only important to advance neuroscience but also to pave
the way to new technological brain-inspired applications. A
previously developed spiking neural network implementation
of sequence prediction and recall learns complex, high-order
sequences in an unsupervised manner by local, biologically
inspired plasticity rules. An emerging type of hardware that
holds promise for efficiently running this type of algorithm
is analog neuromorphic hardware (ANH). It emulates the brain
architecture and maps neurons and synapses directly into a
physical substrate. Memristive devices have been identified
as potential synaptic elements in ANH. In particular,
redox-induced resistive random access memories (ReRAM)
devices stand out at many aspects. They permit scalability,
are energy-efficient and fast, and can implement biological
learning rules. In this work, we study the feasibility of
using ReRAM devices as a replacement of the biological
synapses in the sequence learning model. We implement and
simulate the model including the ReRAM plasticity using the
neural simulator NEST. We investigate two types of ReRAM
devices: (i) an analog switching memristive device, where
the conductance gradually changes between a low conductance
(LCS) and a high conductance state (HCS), and (ii) a binary
switching memristive device, where the conductance abruptly
changes between the LCS and the HCS. We study the
performance characteristics of the sequence learning model
as a function of different device properties, and
demonstrate resilience with respect to different on/off
ratios, conductance resolutions, device variability, and
synaptic failure.},
month = {Mar},
date = {2022-03-28},
organization = {Materials, devices and systems for
neuromorphic computing conference,
Groningen (Netherlands), 28 Mar 2022 -
29 Mar 2022},
subtyp = {After Call},
cin = {INM-6 / IAS-6 / INM-10 / PGI-7 / PGI-10},
cid = {I:(DE-Juel1)INM-6-20090406 / I:(DE-Juel1)IAS-6-20130828 /
I:(DE-Juel1)INM-10-20170113 / I:(DE-Juel1)PGI-7-20110106 /
I:(DE-Juel1)PGI-10-20170113},
pnm = {574 - Theory, modelling and simulation (POF3-574) / 5232 -
Computational Principles (POF4-523) / Advanced Computing
Architectures $(aca_20190115)$ / HBP SGA3 - Human Brain
Project Specific Grant Agreement 3 (945539) / HBP SGA2 -
Human Brain Project Specific Grant Agreement 2 (785907)},
pid = {G:(DE-HGF)POF3-574 / G:(DE-HGF)POF4-5232 /
$G:(DE-Juel1)aca_20190115$ / G:(EU-Grant)945539 /
G:(EU-Grant)785907},
typ = {PUB:(DE-HGF)24},
url = {https://juser.fz-juelich.de/record/907337},
}