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@ARTICLE{Raths:907587,
      author       = {Raths, Miriam and Schott, Christina and Knippertz, Johannes
                      and Franke, Markus and Lin, You-Ron and Haags, Anja and
                      Aeschlimann, Martin and Kumpf, Christian and Stadtmüller,
                      Benjamin},
      title        = {{G}rowth, domain structure, and atomic adsorption sites of
                      h{BN} on the {N}i(111) surface},
      journal      = {Physical review materials},
      volume       = {5},
      number       = {9},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2022-02094},
      pages        = {094001},
      year         = {2021},
      abstract     = {One of the most important functionalities of the atomically
                      thin insulator hexagonal boron nitride (hBN) is its ability
                      to chemically and electronically decouple functional
                      materials from highly reactive surfaces. It is therefore of
                      utmost importance to uncover its structural properties on
                      surfaces on an atomic and mesoscopic length scale. In this
                      paper, we quantify the relative coverages of structurally
                      different domains of a hBN layer on the Ni(111) surface
                      using low-energy electron microscopy and the normal
                      incidence x-ray standing wave technique. We find that hBN
                      nucleates on defect sites of the Ni(111) surface and
                      predominantly grows in two epitaxial domains that are
                      rotated by 60∘ with respect to each other. The two domains
                      reveal identical adsorption heights, indicating a similar
                      chemical interaction strength with the Ni(111) surface. The
                      different azimuthal orientations of these domains originate
                      from different adsorption sites of N and B. We demonstrate
                      that the majority $(≈70\%)$ of hBN domains exhibit a
                      (N,B)=(top,fcc) adsorption site configuration while the
                      minority $(≈30\%)$ show a (N,B)=(top,hcp) configuration.
                      Our study hence underlines the crucial role of the atomic
                      adsorption configuration in the mesoscopic domain structures
                      of in situ fabricated two-dimensional materials on highly
                      reactive surface},
      cin          = {PGI-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-3-20110106},
      pnm          = {5213 - Quantum Nanoscience (POF4-521)},
      pid          = {G:(DE-HGF)POF4-5213},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000705548700001},
      doi          = {10.1103/PhysRevMaterials.5.094001},
      url          = {https://juser.fz-juelich.de/record/907587},
}