TY  - JOUR
AU  - Herrmann, Christoph
AU  - Raths, Miriam
AU  - Kumpf, Christian
AU  - Kavanagh, Karen L.
TI  - Rotational epitaxy of h-BN on Cu (110)
JO  - Surface science
VL  - 721
SN  - 0039-6028
CY  - Amsterdam
PB  - Elsevier
M1  - FZJ-2022-02112
SP  - 122080 -
PY  - 2022
AB  - The growth of wafer-scale, single-crystalline hexagonal boron nitride (h-BN) monolayers on catalytic metallic substrates, requires a sparse nucleation density. At high temperatures ( C), preparation of vicinal Cu (110) with annealing is reported to provide preferential nucleation of single antiphase domains of h-BN with facets parallel to Cu steps. We have used in situ low-energy electron microscopy (LEEM) to image nucleation and growth of h-BN islands on a Cu (110) single crystal at lower temperatures (650–750)C. With annealing, diffraction (LEED) and dark field imaging (LEEM) confirmed the formation of three sets of h-BN antiphase domains. Two sets are epitaxially aligned with four Cu in-plane directions, the lowest lattice mismatch available. While alignment is excellent in one direction, the other trigonal directions are 10.4 rotationally mismatched. A third pair of antiphase domains nucleates aligned with in-plane directions. These domains are midway, rotated 5.2 with respect to either type of domain, and have the lowest interfacial energy. Localized defects were found to correlate with every island nucleation event.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000912772700001
DO  - DOI:10.1016/j.susc.2022.122080
UR  - https://juser.fz-juelich.de/record/907623
ER  -