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@ARTICLE{Herrmann:907623,
author = {Herrmann, Christoph and Raths, Miriam and Kumpf, Christian
and Kavanagh, Karen L.},
title = {{R}otational epitaxy of h-{BN} on {C}u (110)},
journal = {Surface science},
volume = {721},
issn = {0039-6028},
address = {Amsterdam},
publisher = {Elsevier},
reportid = {FZJ-2022-02112},
pages = {122080 -},
year = {2022},
abstract = {The growth of wafer-scale, single-crystalline hexagonal
boron nitride (h-BN) monolayers on catalytic metallic
substrates, requires a sparse nucleation density. At high
temperatures ( C), preparation of vicinal Cu (110) with
annealing is reported to provide preferential nucleation of
single antiphase domains of h-BN with facets parallel to Cu
steps. We have used in situ low-energy electron microscopy
(LEEM) to image nucleation and growth of h-BN islands on a
Cu (110) single crystal at lower temperatures (650–750)C.
With annealing, diffraction (LEED) and dark field imaging
(LEEM) confirmed the formation of three sets of h-BN
antiphase domains. Two sets are epitaxially aligned with
four Cu in-plane directions, the lowest lattice mismatch
available. While alignment is excellent in one direction,
the other trigonal directions are 10.4 rotationally
mismatched. A third pair of antiphase domains nucleates
aligned with in-plane directions. These domains are midway,
rotated 5.2 with respect to either type of domain, and have
the lowest interfacial energy. Localized defects were found
to correlate with every island nucleation event.},
cin = {PGI-3},
ddc = {530},
cid = {I:(DE-Juel1)PGI-3-20110106},
pnm = {5213 - Quantum Nanoscience (POF4-521)},
pid = {G:(DE-HGF)POF4-5213},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000912772700001},
doi = {10.1016/j.susc.2022.122080},
url = {https://juser.fz-juelich.de/record/907623},
}