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@ARTICLE{Kerres:907840,
      author       = {Kerres, Peter and Zhou, Yiming and Vaishnav, Hetal and
                      Raghuwanshi, Mohit and Wang, Jiangjing and Häser, Maria and
                      Pohlmann, Marc and Cheng, Yudong and Schön, Carl-Friedrich
                      and Jansen, Thomas and Bellin, Christophe and Bürgler,
                      Daniel E. and Jalil, Abdur Rehman and Ringkamp, Christoph
                      and Kowalczyk, Hugo and Schneider, Claus M. and Shukla,
                      Abhay and Wuttig, Matthias},
      title        = {{S}caling and {C}onfinement in {U}ltrathin {C}halcogenide
                      {F}ilms as {E}xemplified by {G}e{T}e},
      journal      = {Small},
      volume       = {18},
      number       = {21},
      issn         = {1613-6810},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-02239},
      pages        = {2201753 -},
      year         = {2022},
      abstract     = {Chalcogenides such as GeTe, PbTe, Sb2Te3, and Bi2Se3 are
                      characterized by an unconventional combination of properties
                      enabling a plethora of applications ranging from
                      thermo-electrics to phase change materials, topological
                      insulators, and photonic switches. Chalcogenides possess
                      pronounced optical absorption, relatively low effective
                      masses, reasonably high electron mobilities, soft bonds,
                      large bond polarizabilities, and low thermal conductivities.
                      These remarkable characteristics are linked to an
                      unconventional bonding mechanism characterized by a
                      competition between electron delocalization and electron
                      localization. Confinement, that is, the reduction of the
                      sample dimension as realized in thin films should alter this
                      competition and modify chemical bonds and the resulting
                      properties. Here, pronounced changes of optical and
                      vibrational properties are demonstrated for crystalline
                      films of GeTe, while amorphous films of GeTe show no similar
                      thickness dependence. For crystalline films, this thickness
                      dependence persists up to remarkably large thicknesses above
                      15 nm. X-ray diffraction and accompanying simulations
                      employing density functional theory relate these changes to
                      thickness dependent structural (Peierls) distortions, due to
                      an increased electron localization between adjacent atoms
                      upon reducing the film thickness. A thickness dependence and
                      hence potential to modify film properties for all
                      chalcogenide films with a similar bonding mechanism is
                      expected.},
      cin          = {PGI-10 / PGI-6 / PGI-9},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-10-20170113 / I:(DE-Juel1)PGI-6-20110106 /
                      I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {35491494},
      UT           = {WOS:000789168100001},
      doi          = {10.1002/smll.202201753},
      url          = {https://juser.fz-juelich.de/record/907840},
}