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@ARTICLE{Faley:907881,
      author       = {Faley, M. I. and Dunin-Borkowski, R. E.},
      title        = {{A} {S}elf-{F}lux-{B}iased {N}ano{SQUID} with {F}our
                      {N}b{N}-{T}i{N}-{N}b{N} {N}anobridge {J}osephson
                      {J}unctions},
      journal      = {Electronics},
      volume       = {11},
      number       = {11},
      issn         = {2079-9292},
      address      = {Basel},
      publisher    = {MDPI},
      reportid     = {FZJ-2022-02265},
      pages        = {1704 -},
      year         = {2022},
      abstract     = {We report the development of a planar 4-Josephson-junction
                      nanoscale superconducting quantum interference device
                      (nanoSQUID) that is self-biased for optimal sensitivity
                      without the application of a magnetic flux of Φ0/4. The
                      nanoSQUID contains novel NbN-TiN-NbN nanobridge Josephson
                      junctions (nJJs) with NbN current leads and electrodes of
                      the nanoSQUID body connected by TiN nanobridges. The optimal
                      superconducting transition temperature of ~4.8 K,
                      superconducting coherence length of ~100 nm, and corrosion
                      resistance of the TiN films ensure the hysteresis-free,
                      reproducible, and long-term stability of nJJ and nanoSQUID
                      operation at 4.2 K, while the corrosion-resistant NbN has a
                      relatively high superconducting transition temperature of
                      ~15 K and a correspondingly large energy gap. FIB patterning
                      of the TiN films and nanoscale sculpturing of the tip area
                      of the nanoSQUID’s cantilevers are performed using
                      amorphous Al films as sacrificial layers due to their high
                      chemical reactivity to alkalis. A cantilever is realized
                      with a distance between the nanoSQUID and the substrate
                      corner of ~300 nm. The nJJs and nanoSQUID are characterized
                      using Quantum Design measurement systems at 4.2 K. The
                      technology is expected to be of interest for the fabrication
                      of durable nanoSQUID sensors for low temperature magnetic
                      microscopy, as well as for the realization of more complex
                      circuits for superconducting nanobridge electronics.},
      cin          = {ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {5351 - Platform for Correlative, In Situ and Operando
                      Characterization (POF4-535) / 5353 - Understanding the
                      Structural and Functional Behavior of Solid State Systems
                      (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5351 / G:(DE-HGF)POF4-5353},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000808712800001},
      doi          = {10.3390/electronics11111704},
      url          = {https://juser.fz-juelich.de/record/907881},
}