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@ARTICLE{Bengel:908364,
      author       = {Bengel, Christopher and Mohr, Johannes and Wiefels, Stefan
                      and Singh, Abhairaj and Gebregiorgis, Anteneh and Bishnoi,
                      Rajendra and Hamdioui, Said and Waser, Rainer and Wouters,
                      Dirk and Menzel, Stephan},
      title        = {{R}eliability aspects of binary
                      vector-matrix-multiplications using {R}e{RAM} devices},
      journal      = {Neuromorphic computing and engineering},
      volume       = {2},
      number       = {3},
      issn         = {2634-4386},
      address      = {Bristol},
      publisher    = {IOP Publishing Ltd.},
      reportid     = {FZJ-2022-02566},
      pages        = {034001 -},
      year         = {2022},
      abstract     = {Computation-in-memory using memristive devices is a
                      promising approach to overcome the performance limitations
                      of conventional computing architectures introduced by the
                      von Neumann bottleneck which are also known as memory wall
                      and power wall. It has been shown that accelerators based on
                      memristive devices can deliver higher energy efficiencies
                      and data throughputs when compared with conventional
                      architectures. In the vast multitude of memristive devices,
                      bipolar resistive switches based on the valence change
                      mechanism (VCM) are particularly interesting due to their
                      low power operation, non-volatility, high integration
                      density and their CMOS compatibility. While a wide range of
                      possible applications is considered, many of them such as
                      artificial neural networks heavily rely on
                      vector-matrix-multiplications (VMMs) as a mathematical
                      operation. These VMMs are made up of large numbers of
                      multiplication and accumulation (MAC) operations. The MAC
                      operation can be realised using memristive devices in an
                      analog fashion using Ohm's law and Kirchhoff's law. However,
                      VCM devices exhibit a range of non-idealities, affecting the
                      VMM performance, which in turn impacts the overall accuracy
                      of the application. Those non-idealities can be classified
                      into time-independent (programming variability) and
                      time-dependent (read disturb and read noise). Additionally,
                      peripheral circuits such as analog to digital converters can
                      introduce errors during the digitalization. In this work, we
                      experimentally and theoretically investigate the impact of
                      device- and circuit-level effects on the VMM in a VCM
                      crossbars. Our analysis shows that the variability of the
                      low resistive state plays a key role and that reading in the
                      RESET direction should be favored to reading in the SET
                      direction.},
      cin          = {PGI-7 / PGI-10 / JARA-FIT},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) /
                      BMBF-16ME0398K - Verbundprojekt: Neuro-inspirierte
                      Technologien der künstlichen Intelligenz für die
                      Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) /
                      BMBF-16ME0399 - Verbundprojekt: Neuro-inspirierte
                      Technologien der künstlichen Intelligenz für die
                      Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399) /
                      MNEMOSENE - Computation-in-memory architecture based on
                      resistive devices (780215)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(DE-82)BMBF-16ME0398K /
                      G:(DE-82)BMBF-16ME0399 / G:(EU-Grant)780215},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001064078600001},
      doi          = {10.1088/2634-4386/ac6d04},
      url          = {https://juser.fz-juelich.de/record/908364},
}