% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Gl:908373,
author = {Glöß, Maria and Pütt, Ricarda and Moors, Marco and
Kentzinger, Emmanuel and Karthäuser, Silvia and Monakhov,
Kirill Yu.},
title = {{E}xploring the {L}igand {F}unctionality, {E}lectronic
{B}and {G}aps, and {S}witching {C}haracteristics of {S}ingle
{W}ells–{D}awson‐{T}ype {P}olyoxometalates on {G}old},
journal = {Advanced materials interfaces},
volume = {9},
number = {21},
issn = {2196-7350},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2022-02568},
pages = {2200461 -},
year = {2022},
abstract = {The miniaturization, high performance, energy efficiency,
and new added functionalities are the essential drivers of
modern information data storage and processing technologies.
Polyoxometalates (POMs) characterized by atomically
well-defined structures with discrete energy levels and the
ability to undergo redox transformations are viewed as
promising active components for the integration into the
next-generation (beyond-CMOS) hybrid nanoelectronics.
Herein, new fundamental insights into the application of
organically augmented POMs on conducting surfaces are
offered. Three key findings resulting from scanning probe
investigations combined with integral spectroscopic methods
used to explore tris(alkoxo)-ligated, vanadium-containing
Wells-Dawson-type POM structures on Au(111) are reported on.
First, it is shown how the (OCH2)3C–R ligands, depending
on the structurally exposed R group (R = CH2SMe and
NHCOC6H4SMe), influence the self-assembly behavior of the
synthesized POMs on gold. Second, the impact of the employed
(OCH2)3C–R ligands and the determined assembly
characteristics on the relative position of POM's electronic
band structure against the Fermi level of the gold surface
are explained. Third, the on-surface conductance switching
of single POM structures due to external electrical stimuli
is demonstrated. The author's experimental efforts enable to
discover highly sought-after multi-level resistive switching
orchestrated by electrically accessible V(3d) states in the
POM single-molecules at room temperature in a narrow voltage
range.},
cin = {JCNS-2 / PGI-4 / JARA-FIT / PGI-7},
ddc = {600},
cid = {I:(DE-Juel1)JCNS-2-20110106 / I:(DE-Juel1)PGI-4-20110106 /
$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106},
pnm = {632 - Materials – Quantum, Complex and Functional
Materials (POF4-632) / 6G4 - Jülich Centre for Neutron
Research (JCNS) (FZJ) (POF4-6G4)},
pid = {G:(DE-HGF)POF4-632 / G:(DE-HGF)POF4-6G4},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000816842400001},
doi = {10.1002/admi.202200461},
url = {https://juser.fz-juelich.de/record/908373},
}