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@ARTICLE{Gl:908373,
      author       = {Glöß, Maria and Pütt, Ricarda and Moors, Marco and
                      Kentzinger, Emmanuel and Karthäuser, Silvia and Monakhov,
                      Kirill Yu.},
      title        = {{E}xploring the {L}igand {F}unctionality, {E}lectronic
                      {B}and {G}aps, and {S}witching {C}haracteristics of {S}ingle
                      {W}ells–{D}awson‐{T}ype {P}olyoxometalates on {G}old},
      journal      = {Advanced materials interfaces},
      volume       = {9},
      number       = {21},
      issn         = {2196-7350},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-02568},
      pages        = {2200461 -},
      year         = {2022},
      abstract     = {The miniaturization, high performance, energy efficiency,
                      and new added functionalities are the essential drivers of
                      modern information data storage and processing technologies.
                      Polyoxometalates (POMs) characterized by atomically
                      well-defined structures with discrete energy levels and the
                      ability to undergo redox transformations are viewed as
                      promising active components for the integration into the
                      next-generation (beyond-CMOS) hybrid nanoelectronics.
                      Herein, new fundamental insights into the application of
                      organically augmented POMs on conducting surfaces are
                      offered. Three key findings resulting from scanning probe
                      investigations combined with integral spectroscopic methods
                      used to explore tris(alkoxo)-ligated, vanadium-containing
                      Wells-Dawson-type POM structures on Au(111) are reported on.
                      First, it is shown how the (OCH2)3C–R ligands, depending
                      on the structurally exposed R group (R = CH2SMe and
                      NHCOC6H4SMe), influence the self-assembly behavior of the
                      synthesized POMs on gold. Second, the impact of the employed
                      (OCH2)3C–R ligands and the determined assembly
                      characteristics on the relative position of POM's electronic
                      band structure against the Fermi level of the gold surface
                      are explained. Third, the on-surface conductance switching
                      of single POM structures due to external electrical stimuli
                      is demonstrated. The author's experimental efforts enable to
                      discover highly sought-after multi-level resistive switching
                      orchestrated by electrically accessible V(3d) states in the
                      POM single-molecules at room temperature in a narrow voltage
                      range.},
      cin          = {JCNS-2 / PGI-4 / JARA-FIT / PGI-7},
      ddc          = {600},
      cid          = {I:(DE-Juel1)JCNS-2-20110106 / I:(DE-Juel1)PGI-4-20110106 /
                      $I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106},
      pnm          = {632 - Materials – Quantum, Complex and Functional
                      Materials (POF4-632) / 6G4 - Jülich Centre for Neutron
                      Research (JCNS) (FZJ) (POF4-6G4)},
      pid          = {G:(DE-HGF)POF4-632 / G:(DE-HGF)POF4-6G4},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000816842400001},
      doi          = {10.1002/admi.202200461},
      url          = {https://juser.fz-juelich.de/record/908373},
}