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@ARTICLE{Ravishankar:908477,
      author       = {Ravishankar, Sandheep and Bisquert, Juan and Kirchartz,
                      Thomas},
      title        = {{I}nterpretation of {M}ott–{S}chottky plots of
                      photoanodes for water splitting},
      journal      = {Chemical science},
      volume       = {13},
      number       = {17},
      issn         = {2041-6520},
      address      = {Cambridge},
      publisher    = {RSC},
      reportid     = {FZJ-2022-02630},
      pages        = {4828 - 4837},
      year         = {2022},
      abstract     = {A large body of literature reports that both bismuth
                      vanadate and haematite photoanodes are semiconductors with
                      an extremely high doping density between $10^18-10^21$ cm-3.
                      Such values are obtained from Mott-Schottky plots by
                      assuming that the measured capacitance is dominated by the
                      capacitance of the depletion layer formed by the doping
                      density within the photoanode. In this work, we show that
                      such an assumption is erroneous in many cases because the
                      injection of electrons from the collecting contact creates a
                      ubiquitous capacitance step that is very difficult to
                      distinguish from that of the depletion layer. Based on this
                      reasoning, we derive an analytical resolution limit that is
                      independent of the assumed active area and surface roughness
                      of the photoanode, below which doping densities cannot be
                      measured in a capacitance measurement. We find that the
                      reported doping densities in literature lie very close to
                      this value and therefore conclude that there is no credible
                      evidence from capacitance measurements that confirms that
                      bismuth vanadate and haematite photoanodes contain high
                      doping densities.},
      cin          = {IEK-5},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1215 - Simulations, Theory, Optics, and Analytics (STOA)
                      (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1215},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {35655867},
      UT           = {WOS:000781235700001},
      doi          = {10.1039/D1SC06401K},
      url          = {https://juser.fz-juelich.de/record/908477},
}