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@ARTICLE{Schroeder:9086,
      author       = {Schroeder, H. and Zhirnov, V.V. and Cavin, R.K. and Waser,
                      R.},
      title        = {{V}oltage-time dilemma of pure electronic mechanisms in
                      resistive switching memory cells},
      journal      = {Journal of applied physics},
      volume       = {107},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-9086},
      pages        = {054517},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Metal/insulator/metal thin film stacks showing stable
                      resistive switching are promising candidates for future use
                      as a nonvolatile resistive random access memory, competitive
                      to FLASH and DRAM. Although the switching mechanisms are not
                      completely understood a lot of theories and models try to
                      describe the effects. One of them postulates the trapping
                      and detrapping of electronic charge in immobile traps as the
                      reason for the resistance changes, also known as Simmons
                      $\&$ Verderber model. This contribution shows that this
                      "pure electronic" switching mechanism will face a
                      voltage-time dilemma-general to all switching insulators-at
                      conditions competitive to the state-of-the-art FLASH. There
                      is an incompatibility between the long retention time (10
                      years) and the short READ/WRITE current pulses
                      (t(READ/WRITE) <= 100 ns) at high densities (area <= 100 x
                      100 nm(2)) at low applied voltages (<= 1 V). This general
                      dilemma is exemplified in two detailed scenarios with
                      different electronic band and defect properties. (C) 2010
                      American Institute of Physics. [doi: 10.1063/1.3319591]},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000275657500133},
      doi          = {10.1063/1.3319591},
      url          = {https://juser.fz-juelich.de/record/9086},
}