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@ARTICLE{Dittmann:909102,
      author       = {Dittmann, Regina and Menzel, Stephan and Waser, Rainer},
      title        = {{N}anoionic memristive phenomena in metal oxides: the
                      valence change mechanism},
      journal      = {Advances in physics},
      volume       = {70},
      number       = {2},
      issn         = {0001-8732},
      address      = {London},
      publisher    = {Taylor $\&$ Francis},
      reportid     = {FZJ-2022-03012},
      pages        = {155-349},
      year         = {2022},
      abstract     = {This review addresses resistive switching devices operating
                      according to the bipolar valence change mechanism (VCM),
                      which has become a major trend in electronic materials and
                      devices over the last decade due to its high potential for
                      non-volatile memories and future neuromorphic computing. We
                      will provide detailed insights into the status of
                      understanding of these devices as a fundament for their use
                      in the different fields of application. The review covers
                      the microscopic physics of memristive states and the
                      switching kinetics of VCM devices. It is shown that the
                      switching of all variants of VCM cells relies on the
                      movement of mobile donor ions, which are typically oxygen
                      vacancies or cation interstitials. VCM cells consist of
                      three parts: an electronically active electrode (AE), often
                      a metal with a high work function, in front of which the
                      switching occurs, a mixed ionic-electronic conducting (MIEC)
                      layer consisting of a nanometer-scale metal oxide or a stack
                      of different metal oxides, and an ohmic counter electrode
                      (OE). After an introduction to definitions and
                      classification, the fundamentals of solid-state physics and
                      chemistry associated with VCM cells are described, including
                      redox processes and the role of electrodes. The microscopic
                      changes induced by electroforming, a process often required
                      prior to resistive switching, are described in terms of
                      electronic initialization and subsequent changes in
                      chemistry, structure, and conductivity. The switching
                      process is discussed in terms of switching polarity,
                      geometry of the switching region, and spectroscopic
                      detection of the valence changes. Emphasis is placed on the
                      extreme nonlinearity of switching kinetics described by
                      physics-based multiscale modeling, ranging from ab initio
                      methods to kinetic Monte Carlo and finite element models to
                      compact models that can be used in circuit simulators. The
                      review concludes with a treatment of the highly relevant
                      reliability issues and a description of the failure
                      mechanisms, including mutual trade-offs.},
      cin          = {PGI-7 / PGI-10 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) / BMBF
                      16ES1133K - Verbundprojekt: Neuro-inspirierte Technologien
                      der künstlichen Intelligenz für die Elektronik der Zukunft
                      - NEUROTEC -, Teilvorhaben: Forschungszentrum Jülich
                      (16ES1133K)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(BMBF)16ES1133K},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000836976000001},
      doi          = {10.1080/00018732.2022.2084006},
      url          = {https://juser.fz-juelich.de/record/909102},
}