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@ARTICLE{Stecconi:909568,
      author       = {Stecconi, Tommaso and Guido, Roberto and Berchialla, Luca
                      and La Porta, Antonio and Weiss, Jonas and Popoff, Youri and
                      Halter, Mattia and Sousa, Marilyne and Horst, Folkert and
                      Dávila, Diana and Drechsler, Ute and Dittmann, Regina and
                      Offrein, Bert Jan and Bragaglia, Valeria},
      title        = {{F}ilamentary {T}a{O} x /{H}f{O} 2 {R}e{RAM} {D}evices for
                      {N}eural {N}etworks {T}raining with {A}nalog {I}n‐{M}emory
                      {C}omputing},
      journal      = {Advanced electronic materials},
      volume       = {8},
      number       = {10},
      issn         = {2199-160X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH Verlag GmbH $\&$ Co. KG},
      reportid     = {FZJ-2022-03250},
      pages        = {2200448 -},
      year         = {2022},
      abstract     = {The in-memory computing paradigm aims at overcoming the
                      intrinsic inefficiencies of Von-Neumann computers by
                      reducing the data-transport per arithmetic operation.
                      Crossbar arrays of multilevel memristive devices enable
                      efficient calculations of matrix-vector-multiplications, an
                      operation extensively called on in artificial intelligence
                      (AI) tasks. Resistive random-access memories (ReRAMs) are
                      promising candidate devices for such applications. However,
                      they generally exhibit large stochasticity and
                      device-to-device variability. The integration of a
                      sub-stoichiometric metal-oxide within the ReRAM stack can
                      improve the resistive switching graduality and
                      stochasticity. To this purpose, a conductive TaOx layer is
                      developed and stacked on HfO2 between TiN electrodes, to
                      create a complementary metal-oxide-semiconductor-compatible
                      ReRAM structure. This device shows accumulative conductance
                      updates in both directions, as required for training neural
                      networks. Moreover, by reducing the TaOx thickness and by
                      increasing its resistivity, the device resistive states
                      increase, as required for reduced power consumption. An
                      electric field-driven TaOx oxidation/reduction is
                      responsible for the ReRAM switching. To demonstrate the
                      potential of the optimized TaOx/HfO2 devices, the training
                      of a fully-connected neural network on the Modified National
                      Institute of Standards and Technology database dataset is
                      simulated and benchmarked against a full precision digital
                      implementation.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) / MANIC
                      - Materials for Neuromorphic Circuits (861153) / DFG project
                      167917811 - SFB 917: Resistiv schaltende Chalkogenide für
                      zukünftige Elektronikanwendungen: Struktur, Kinetik und
                      Bauelementskalierung "Nanoswitches" (167917811) /
                      BMBF-16ME0398K - Verbundprojekt: Neuro-inspirierte
                      Technologien der künstlichen Intelligenz für die
                      Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) /
                      BMBF-16ME0404 - Verbundprojekt: Neuro-inspirierte
                      Technologien der künstlichen Intelligenz für die
                      Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0404) /
                      BMBF-03ZU1106AB - NeuroSys: "Memristor Crossbar
                      Architekturen (Projekt A) - B" (BMBF-03ZU1106AB) / ACA -
                      Advanced Computing Architectures (SO-092)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(EU-Grant)861153 /
                      G:(GEPRIS)167917811 / G:(DE-82)BMBF-16ME0398K /
                      G:(DE-82)BMBF-16ME0404 / G:(DE-Juel1)BMBF-03ZU1106AB /
                      G:(DE-HGF)SO-092},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000822534500001},
      doi          = {10.1002/aelm.202200448},
      url          = {https://juser.fz-juelich.de/record/909568},
}