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@ARTICLE{Soni:9096,
      author       = {Soni, R. and Meuffels, P. and Petraru, A. and Weides, M.
                      and Kügeler, C. and Waser, R. and Kohlstedt, H.},
      title        = {{P}robing {C}u doped ${G}e_0.3{S}e_0.7$ based resistance
                      switching memory devices with random telegraph noise},
      journal      = {Journal of applied physics},
      volume       = {107},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-9096},
      pages        = {024517 - 024527},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The ultimate sensitivity of any solid state device is
                      limited by fluctuations. Fluctuations are manifestations of
                      the thermal motion of matter and the discreteness of its
                      structure which are also inherent ingredients during the
                      resistive switching process of resistance random access
                      memory (RRAM) devices. In quest for the role of fluctuations
                      in different memory states and to develop resistive
                      switching based nonvolatile memory devices, here we present
                      our study on random telegraph noise (RTN) resistance
                      fluctuations in Cu doped Ge0.3Se0.7 based RRAM cells. The
                      influence of temperature and electric field on the RTN
                      fluctuations is studied on different resistance states of
                      the memory cells to reveal the dynamics of the underlying
                      fluctuators. Our analysis indicates that the observed
                      fluctuations could arise from thermally activated
                      transpositions of Cu ions inside ionic or redox "double-site
                      traps" triggering fluctuations in the current transport
                      through a filamentary conducting path. Giant RTN
                      fluctuations characterized by relative resistance variations
                      of up to $50\%$ in almost macroscopic samples clearly point
                      to the existence of weak links with small effective
                      cross-sectional areas along the conducting paths. Such large
                      resistance fluctuations can be an important issue for the
                      industrial applications of RRAM devices because they might
                      lead to huge bit-error rates during reading cycles.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000274180600121},
      doi          = {10.1063/1.3291132},
      url          = {https://juser.fz-juelich.de/record/9096},
}