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@ARTICLE{Hong:909618,
      author       = {Hong, Yan and Rose, Marc-André and Zhang, Zhaoting and Li,
                      Ming and Heymann, Lisa and He, Suqin and Gunkel, Felix},
      title        = {{M}odulating {S}pin {P}olarization and {S}pin-{O}rbit
                      {I}nteraction by {S}ubmonolayer {E}ngineering at {L}a {A}l
                      {O} 3 / {S}r {T}i {O} 3 {I}nterfaces},
      journal      = {Physical review applied},
      volume       = {18},
      number       = {3},
      issn         = {2331-7019},
      address      = {College Park, Md. [u.a.]},
      publisher    = {American Physical Society},
      reportid     = {FZJ-2022-03289},
      pages        = {034012},
      year         = {2022},
      abstract     = {Recently, the LaAlO3/SrTiO3 (LAO/STO) interface has been
                      highlighted as a major platform for spintronics, and its
                      fundamental control of spin properties, therefore, becomes a
                      key issue for application of this system. Here, we present a
                      study showing the modulation of magnetic two-dimensional
                      electron gases (2DEGs) with simultaneously enhanced
                      spin-orbit interaction at the interface of LAO/STO by
                      inserting LaCoO3 submonolayers. At first, transport
                      experiments provide evidence that Kondo behavior can be well
                      controlled below about 13 K with the interlayer Co ions
                      contributing as scattering centers. In addition, the
                      systematic variation of the anomalous Hall effect obtained
                      with increasing fraction of interfacial Co concentration
                      below 10 K reveals that the spin polarization of 2DEGs is
                      enhanced via submonolayer insertion. Simultaneously, we also
                      observe an enlarged spin-orbit interaction at the buffered
                      LAO/STO interface, resulting in a remarkably strong
                      field-orientation-dependent magnetoresistance. Such tailored
                      LAO/STO interfaces could potentially contribute to stronger
                      spin-to-charge conversion responses and spin-torque
                      measurements. Our observations indicate the subunit-cell
                      insertion of functional layers to be a suitable route to
                      tailor spin, orbital, and lattice interactions of the
                      interfacial 2DEG, which makes the LAO/STO system an
                      intriguing platform for spintronic applications.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000863103200002},
      doi          = {10.1103/PhysRevApplied.18.034012},
      url          = {https://juser.fz-juelich.de/record/909618},
}