% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Gutsche:909835,
      author       = {Gutsche, Alexander and Hambsch, Sebastian and Branca, Nuno
                      Casa and Dittmann, Regina and Scholz, Stefan and Knoch,
                      Joachim},
      title        = {{D}isentangling ionic and electronic contributions to the
                      switching dynamics of memristive {P}r 0.7 {C}a 0.3 {M}n{O} 3
                      / {A}l devices by employing a two-resistor model},
      journal      = {Physical review materials},
      volume       = {6},
      number       = {9},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2022-03453},
      pages        = {095002},
      year         = {2022},
      abstract     = {Area-dependent memristive devices such as Al/Pr0.7Ca0.3MnO3
                      (PCMO) stacks are highly interesting candidates for synapses
                      in neuromorphic circuits due to their gradual switching
                      properties, their reduced variability and the possibility to
                      tune the resistance with the device area. However, due to
                      the complexity of the different processes taking place, the
                      electronic and ionic transport in theses devices is so far
                      only poorly understood and physical compact models to
                      simulate their behavior are missing so far. We developed a
                      mathematical description of the dynamics of theses devices
                      based on a simple two-resistor model that reproduces the
                      device behavior very well. Based on x-ray photoelectron
                      spectroscopy and impedance spectroscopy we assign the two
                      resistors to the AlOx layer and a depletion zone at the
                      Pr0.7Ca0.3MnO3 layer, respectively. We assign the parameters
                      used within the mathematical model to physical parameters
                      and make use of them in order to explain the dynamics of the
                      switching processes during the SET and RESET process in
                      different voltage regimes. For both poly- and single
                      crystalline PCMO thin film devices, oxygen migration between
                      the AlOx and the PCMO depletion zone is responsible for the
                      resistance change. However, the dynamics differ
                      significantly due to the increased mobility of oxygen
                      vacancies with increasing defect density in the case of the
                      polycrystalline samples. Moreover, we observe volatile
                      subloops in our current-voltage curves, which vanish within
                      millisecond time scale. Based on our two-resistor model and
                      the band diagram derived from spectroscopic measurements, we
                      assign these subloops to the injection of electrons into
                      traps within the AlOx barrier.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) /
                      BMBF-16ME0399 - Verbundprojekt: Neuro-inspirierte
                      Technologien der künstlichen Intelligenz für die
                      Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399) /
                      BMBF-16ME0398K - Verbundprojekt: Neuro-inspirierte
                      Technologien der künstlichen Intelligenz für die
                      Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) /
                      Advanced Computing Architectures $(aca_20190115)$ /
                      BMBF-03ZU1106AB - NeuroSys: "Memristor Crossbar
                      Architekturen (Projekt A) - B" (BMBF-03ZU1106AB)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(DE-82)BMBF-16ME0399 /
                      G:(DE-82)BMBF-16ME0398K / $G:(DE-Juel1)aca_20190115$ /
                      G:(DE-Juel1)BMBF-03ZU1106AB},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000874905300002},
      doi          = {10.1103/PhysRevMaterials.6.095002},
      url          = {https://juser.fz-juelich.de/record/909835},
}