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| Hauptseite > Publikationsdatenbank > In-Gap States of HfO 2 Nanoislands Driven by Crystal Nucleation: Implications for Resistive Random-Access Memory Devices > print |
| Hauptseite > Publikationsdatenbank > In-Gap States of HfO 2 Nanoislands Driven by Crystal Nucleation: Implications for Resistive Random-Access Memory Devices > print |
| 001 | 910064 | ||
| 005 | 20231027114346.0 | ||
| 024 | 7 | _ | |a 10.1021/acsanm.2c04165 |2 doi |
| 024 | 7 | _ | |a 2128/33657 |2 Handle |
| 024 | 7 | _ | |a WOS:000877146000001 |2 WOS |
| 037 | _ | _ | |a FZJ-2022-03592 |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Schmidt, Niclas |0 P:(DE-Juel1)179230 |b 0 |
| 245 | _ | _ | |a In-Gap States of HfO 2 Nanoislands Driven by Crystal Nucleation: Implications for Resistive Random-Access Memory Devices |
| 260 | _ | _ | |a Washington, DC |c 2023 |b ACS Publications |
| 336 | 7 | _ | |a article |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1673949313_26150 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a Envisioned extremely scaled, high-performance memory devices request to conduct the step from thin semiconductor films to nanoscale structures and the use of promising high-k materials such as hafnium oxide (HfO2). HfO2 is well suited for use in resistive random-access memory (ReRAM) devices based on the valence change mechanism. Here, we provide a decidedly scaled system, namely, HfO2 nanoislands that are grown by van der Waals epitaxy on highly oriented pyrolytic graphite (HOPG). The electronic and structural properties of these well-separated, crystalline HfO2 nanoislands are investigated by scanning probe methods as well as ab initio methods. The topography reveals homogeneously formed HfO2 nanoislands with areas down to 7 nm2 and a thickness of one unit cell. They exhibit several acceptor- and donor-like in-gap states in addition to the bulk band gap, implying bulk properties. X-ray photoelectron spectroscopy indicates hafnium carbide formation as one possible origin for defect states. Going further to the crystal nucleation of HfO2, nanocrystals with a diameter of 2.7–4.5 Å are identified next to carbon vacancies in the topmost HOPG layer, indicating that carbon is incorporated into the islands at early nucleation stages. A precise description of these nuclei is accomplished by the simulation of small HfmOn(:C) clusters (m = 3 to 10; n = 3 to 22) with and without carbon incorporation using ab initio methods. The comparison of the theoretically determined lowest-energy clusters and electronic states with the experimental results allows us to identify the structure of the most relevant HfO2 sub-nanometer crystals formed during the first nucleation steps and the nature of the in-gap states found at the surfaces of HfO2 nanoislands. That way, a model system is derived that consists of distinct structural units, related to surface states or defect states, respectively, that will promote the tailoring of in-gap states of smallest HfO2 structures and thus the scalability of memory devices. |
| 536 | _ | _ | |a 5233 - Memristive Materials and Devices (POF4-523) |0 G:(DE-HGF)POF4-5233 |c POF4-523 |x 0 |f POF IV |
| 536 | _ | _ | |a DFG project 167917811 - SFB 917: Resistiv schaltende Chalkogenide für zukünftige Elektronikanwendungen: Struktur, Kinetik und Bauelementskalierung "Nanoswitches" (167917811) |0 G:(GEPRIS)167917811 |c 167917811 |x 1 |
| 588 | _ | _ | |a Dataset connected to DataCite |
| 700 | 1 | _ | |a Rushchanskii, Konstantin Z. |0 P:(DE-Juel1)130926 |b 1 |e Corresponding author |
| 700 | 1 | _ | |a Trstenjak, Urška |0 0000-0002-9447-1502 |b 2 |
| 700 | 1 | _ | |a Dittmann, Regina |0 P:(DE-Juel1)130620 |b 3 |u fzj |
| 700 | 1 | _ | |a Karthäuser, Silvia |0 P:(DE-Juel1)130751 |b 4 |e Corresponding author |
| 773 | _ | _ | |a 10.1021/acsanm.2c04165 |g p. acsanm.2c04165 |0 PERI:(DE-600)2916552-0 |n 1 |p 148-159 |t ACS applied nano materials |v 6 |y 2023 |x 2574-0970 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/910064/files/Invoice-APC600354747.pdf |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/910064/files/Invoice-APC600354754.pdf |
| 856 | 4 | _ | |y OpenAccess |u https://juser.fz-juelich.de/record/910064/files/acsanm.2c04165-1.pdf |
| 909 | C | O | |o oai:juser.fz-juelich.de:910064 |p openaire |p open_access |p OpenAPC |p driver |p VDB |p openCost |p dnbdelivery |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)179230 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)130926 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 0000-0002-9447-1502 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)130620 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)130751 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Natural, Artificial and Cognitive Information Processing |1 G:(DE-HGF)POF4-520 |0 G:(DE-HGF)POF4-523 |3 G:(DE-HGF)POF4 |2 G:(DE-HGF)POF4-500 |4 G:(DE-HGF)POF |v Neuromorphic Computing and Network Dynamics |9 G:(DE-HGF)POF4-5233 |x 0 |
| 914 | 1 | _ | |y 2023 |
| 915 | _ | _ | |a Creative Commons Attribution-NonCommercial-NoDerivs CC BY-NC-ND 4.0 |0 LIC:(DE-HGF)CCBYNCND4 |2 HGFVOC |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0113 |2 StatID |b Science Citation Index Expanded |d 2020-09-04 |
| 915 | _ | _ | |a OpenAccess |0 StatID:(DE-HGF)0510 |2 StatID |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0160 |2 StatID |b Essential Science Indicators |d 2020-09-04 |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |b ACS APPL NANO MATER : 2022 |d 2023-10-27 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |d 2023-10-27 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |d 2023-10-27 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Clarivate Analytics Master Journal List |d 2023-10-27 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |d 2023-10-27 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1160 |2 StatID |b Current Contents - Engineering, Computing and Technology |d 2023-10-27 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |d 2023-10-27 |
| 915 | _ | _ | |a IF >= 5 |0 StatID:(DE-HGF)9905 |2 StatID |b ACS APPL NANO MATER : 2022 |d 2023-10-27 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-7-20110106 |k PGI-7 |l Elektronische Materialien |x 0 |
| 920 | 1 | _ | |0 I:(DE-Juel1)IAS-1-20090406 |k IAS-1 |l Quanten-Theorie der Materialien |x 1 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-1-20110106 |k PGI-1 |l Quanten-Theorie der Materialien |x 2 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 3 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)IAS-1-20090406 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-1-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a APC |
| 980 | 1 | _ | |a APC |
| 980 | 1 | _ | |a FullTexts |
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