% IMPORTANT: The following is UTF-8 encoded. This means that in the presence % of non-ASCII characters, it will not work with BibTeX 0.99 or older. % Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or % “biber”. @INPROCEEDINGS{Junk:910085, author = {Junk, Yannik and Frauenrath, Marvin and Han, Yi and Concepción Díaz, Omar and Bae, Jin Hee and Hartmann, Jean-Michel and Grützmacher, Detlev and Buca, Dan Mihai and Zhao, Qing-Tai}, title = {{G}e{S}n {V}ertical {G}ate-all-around {N}anowire n-type {MOSFET}s}, reportid = {FZJ-2022-03604}, year = {2022}, abstract = {Vertical GeSn gate-all-around (GAA) nanowire nMOSFETs fabricated using a top-down approach are presented. The devices are benchmarked with similar Ge and Ge/GeSn/Ge heterostructure devices to underline the great potential of GeSn for future nMOS devices. Device measurements are performed in the temperature range from 12 K to room temperature (RT, 300 K). At RT the all-GeSn n-MOSFETs show a subthreshold swing (SS) of ~120 mV/dec that decreases at cryogenic temperatures to a very steep 20mV/dec. The abrupt transition from subthreshold to on-state shows the suitability of GeSn alloys for cryogenic CMOS applications.}, month = {Sep}, date = {2022-09-19}, organization = {IEEE 52nd European Solid State Device Research Conference, Milan (Italy), 19 Sep 2022 - 22 Sep 2022}, subtyp = {Panel discussion}, cin = {PGI-9}, cid = {I:(DE-Juel1)PGI-9-20110106}, pnm = {5234 - Emerging NC Architectures (POF4-523)}, pid = {G:(DE-HGF)POF4-5234}, typ = {PUB:(DE-HGF)6}, url = {https://juser.fz-juelich.de/record/910085}, }