000910086 001__ 910086
000910086 005__ 20221027130516.0
000910086 037__ $$aFZJ-2022-03605
000910086 041__ $$aEnglish
000910086 1001_ $$0P:(DE-Juel1)185010$$aJunk, Yannik$$b0$$eCorresponding author
000910086 1112_ $$a241st ECS Meeting$$cVancouver$$d2022-05-29 - 2022-06-02$$wCanada
000910086 245__ $$aVertical GeSn/Ge Heterostructure Gate-All-Around Nanowire p-MOSFETs
000910086 260__ $$c2022
000910086 3367_ $$033$$2EndNote$$aConference Paper
000910086 3367_ $$2DataCite$$aOther
000910086 3367_ $$2BibTeX$$aINPROCEEDINGS
000910086 3367_ $$2DRIVER$$aconferenceObject
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000910086 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1666867801_25413$$xPanel discussion
000910086 520__ $$aA process for the fabrication of vertical gate-all-around (GAA) nanowire p-FETs with diameters of down to 20 nm based on Ge and GeSn/Ge-heterostructures is presented. The resulting Ge-based devices exhibit a low subthreshold slope (SS) of 66 mV/dec, a low drain-induced barrier lowering of 35 mV/V and an Ion/Ioff-ratio of 2.1×10^6 for devices with a diameter of 20 nm. Using a GeSn/Ge-heterostructure with GeSn as the top layer and source of the device, the on-current was increased by ~32%. With these results the high potential of incorporation of GeSn into Ge-MOSFET technology is demonstrated.
000910086 536__ $$0G:(DE-HGF)POF4-5234$$a5234 - Emerging NC Architectures (POF4-523)$$cPOF4-523$$fPOF IV$$x0
000910086 7001_ $$0P:(DE-HGF)0$$aLiu, Mingshan$$b1
000910086 7001_ $$0P:(DE-HGF)0$$aFrauenrath, Marvin$$b2
000910086 7001_ $$0P:(DE-HGF)0$$aHartmann, Jean-Michel$$b3
000910086 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b4
000910086 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b5
000910086 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b6
000910086 909CO $$ooai:juser.fz-juelich.de:910086$$pVDB
000910086 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)185010$$aForschungszentrum Jülich$$b0$$kFZJ
000910086 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich$$b1$$kFZJ
000910086 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich$$b4$$kFZJ
000910086 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich$$b5$$kFZJ
000910086 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128649$$aForschungszentrum Jülich$$b6$$kFZJ
000910086 9131_ $$0G:(DE-HGF)POF4-523$$1G:(DE-HGF)POF4-520$$2G:(DE-HGF)POF4-500$$3G:(DE-HGF)POF4$$4G:(DE-HGF)POF$$9G:(DE-HGF)POF4-5234$$aDE-HGF$$bKey Technologies$$lNatural, Artificial and Cognitive Information Processing$$vNeuromorphic Computing and Network Dynamics$$x0
000910086 9141_ $$y2022
000910086 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
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000910086 980__ $$aI:(DE-Juel1)PGI-9-20110106
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