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@INPROCEEDINGS{Junk:910086,
      author       = {Junk, Yannik and Liu, Mingshan and Frauenrath, Marvin and
                      Hartmann, Jean-Michel and Grützmacher, Detlev and Buca, Dan
                      Mihai and Zhao, Qing-Tai},
      title        = {{V}ertical {G}e{S}n/{G}e {H}eterostructure
                      {G}ate-{A}ll-{A}round {N}anowire p-{MOSFET}s},
      reportid     = {FZJ-2022-03605},
      year         = {2022},
      abstract     = {A process for the fabrication of vertical gate-all-around
                      (GAA) nanowire p-FETs with diameters of down to 20 nm based
                      on Ge and GeSn/Ge-heterostructures is presented. The
                      resulting Ge-based devices exhibit a low subthreshold slope
                      (SS) of 66 mV/dec, a low drain-induced barrier lowering of
                      35 mV/V and an Ion/Ioff-ratio of $2.1×10^6$ for devices
                      with a diameter of 20 nm. Using a GeSn/Ge-heterostructure
                      with GeSn as the top layer and source of the device, the
                      on-current was increased by $~32\%.$ With these results the
                      high potential of incorporation of GeSn into Ge-MOSFET
                      technology is demonstrated.},
      month         = {May},
      date          = {2022-05-29},
      organization  = {241st ECS Meeting, Vancouver (Canada),
                       29 May 2022 - 2 Jun 2022},
      subtyp        = {Panel discussion},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/910086},
}