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@ARTICLE{Maiti:910212,
      author       = {Maiti, Sonam and Ohlerth, Thorsten and Schmidt, Niclas and
                      Aussen, Stephan and Waser, Rainer and Simon, Ulrich and
                      Karthäuser, Silvia},
      title        = {{M}oisture {E}ffect on the {T}hreshold {S}witching of
                      {TOPO}-{S}tabilized {S}ub-10 nm {H}f{O} 2 {N}anocrystals in
                      {N}anoscale {D}evices},
      journal      = {The journal of physical chemistry / C},
      volume       = {126},
      number       = {43},
      issn         = {1932-7447},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2022-03689},
      pages        = {18571 - 18579},
      year         = {2022},
      abstract     = {The enduring demand for ever-increasing storage capacities
                      inspires the development of new few nanometer-sized,
                      high-performance memory devices. In this work,
                      tri-n-octylphosphine oxide (TOPO)-stabilized sub-10 nm
                      monoclinic HfO2 nanocrystals (NC) with a rod-like and
                      spherical shape are synthesized and used to build up
                      microscale and nanoscale test devices. The electrical
                      characterization of these devices studied by cyclic
                      current–voltage measurements reveals a redox-like behavior
                      in ambient atmosphere and volatile threshold switching in
                      vacuum. By employing a thorough spectroscopic and surface
                      analysis (FT-IR and NMR spectroscopy and XPS), the origin of
                      this behavior was elucidated. While the redox behavior is
                      enabled by residual moisture present during clean-up of the
                      NC and thin film preparation, which leads to a partial
                      desorption of TOPO from the NC surface, threshold switching
                      is obtained for dry TOPO-stabilized HfO2 NC in microchannel
                      as well as in nanoelectrode devices addressing only a few
                      sub-10 nm TOPO-stabilized HfO2 NC. The results show that
                      integration of sub-10 nm HfO2 NC in nanoscale devices is
                      feasible to build up switching elements.},
      cin          = {PGI-7 / JARA-FIT / PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000877343500001},
      doi          = {10.1021/acs.jpcc.2c06303},
      url          = {https://juser.fz-juelich.de/record/910212},
}