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@ARTICLE{Das:910215,
      author       = {Das, Basita and Aguilera, Irene and Rau, Uwe and Kirchartz,
                      Thomas},
      title        = {{E}ffect of {D}oping, {P}hotodoping, and {B}andgap
                      {V}ariation on the {P}erformance of {P}erovskite {S}olar
                      {C}ells},
      journal      = {Advanced optical materials},
      volume       = {10},
      number       = {13},
      issn         = {2195-1071},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-03692},
      pages        = {2101947},
      year         = {2022},
      abstract     = {Most traditional semiconductor materials are based on the
                      control of doping densities to create junctions and thereby
                      functional and efficient electronic and optoelectronic
                      devices. The technology development for halide perovskites
                      had initially only rarely made use of the concept of
                      electronic doping of the perovskite layer and instead
                      employed a variety of different contact materials to create
                      functionality. Only recently, intentional or unintentional
                      doping of the perovskite layer is more frequently invoked as
                      an important factor explaining differences in photovoltaic
                      or optoelectronic performance in certain devices. Here,
                      numerical simulations are used to study the influence of
                      doping and photodoping on photoluminescence quantum yield
                      and other device relevant metrics. It is found that doping
                      can improve the photoluminescence quantum yield by making
                      radiative recombination faster. This effect can benefit, or
                      harm, photovoltaic performance given that the improvement of
                      photoluminescence quantum efficiency and open-circuit
                      voltage is accompanied by a reduction of the diffusion
                      length. This reduction will eventually lead to inefficient
                      carrier collection at high doping densities. The
                      photovoltaic performance may improve at an optimum doping
                      density which depends on a range of factors such as the
                      mobilities of the different layers and the ratio of the
                      charge carrier capture cross sections.},
      cin          = {IEK-5},
      ddc          = {670},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1215 - Simulations, Theory, Optics, and Analytics (STOA)
                      (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1215},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000787730700001},
      doi          = {10.1002/adom.202101947},
      url          = {https://juser.fz-juelich.de/record/910215},
}