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@ARTICLE{Eberst:910253,
      author       = {Eberst, Alexander and Zamchiy, Alexandr and Qiu, Kaifu and
                      Winkel, Peter and Gebrewold, Habtamu T. and Lambertz,
                      Andreas and Duan, Weiyuan and Li, Shenghao and Bittkau,
                      Karsten and Kirchartz, Thomas and Rau, Uwe and Ding,
                      Kaining},
      title        = {{O}ptical {O}ptimization {P}otential of
                      {T}ransparent‐{P}assivated {C}ontacts in {S}ilicon {S}olar
                      {C}ells},
      journal      = {Solar RRL},
      volume       = {6},
      number       = {6},
      issn         = {2367-198X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2022-03714},
      pages        = {2101050 -},
      year         = {2022},
      abstract     = {Herein, an optical loss analysis of the recently introduced
                      silicon carbide–based transparent passivating contact
                      (TPC) for silicon heterojunction solar cells is presented,
                      the most dominant losses are identified, and the potential
                      for reducing these losses is discussed. Magnesium fluoride
                      is applied as an antireflective coating to reduce the
                      reflective losses by up to 0.8 mA cm−2. When applying
                      the magnesium fluoride, the passivation quality of the layer
                      stack degrades, but is restored after annealing on a hot
                      plate in ambient air. Afterwards, a road map for TPC solar
                      cells toward an efficiency of $25\%$ is presented and
                      discussed. The largest part in efficiency gain is achieved
                      by reducing the finger width and by increasing the
                      passivation quality. Furthermore, it is shown that TPC solar
                      cells have the potential to achieve short-circuit current
                      densities above 42 mA cm−2 if the finger width is
                      reduced and the front-side indium tin oxide (ITO) layer can
                      be replaced by an ITO silicon nitride double layer.},
      cin          = {IEK-5},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1215 - Simulations, Theory, Optics, and Analytics (STOA)
                      (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1215},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000752937700001},
      doi          = {10.1002/solr.202101050},
      url          = {https://juser.fz-juelich.de/record/910253},
}